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Polaronic and Screening Effects on Acceptor Impurities in Polar Semiconductors: A Variational Approach with the Mgecsc Potential
by Mamadou COULIBALY, Ibrahima Gueye FAYE and Bassirou LO
International Journal of Physics. 2025, 13(4), 91-104. DOI: 10.12691/ijp-13-4-2
Pub. Date: September 23, 2025Views: 2220Downloads: 5831
Impurity states Photoionization cross section Polaron effects MGECSC potential Central-cell correction plasma GaAs CdTe Electron–phonon coupling Variational method Huang–Rhys factor
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