Annealing Effect on (SnO₂)_0.3:(In₂O₃)_0.7 Solar Cell Prepared by PLD Technique

Abdulmajeed E. Ibrahim¹, Kadhem A. Aadim² and Qutaibah A. Abduljabbar^1,

¹Department of Physics, University of Tikrit/College of Education

²Department of Physics, University of Baghdad / College of Sciences

Cite this paper:
Abdulmajeed E. Ibrahim, Kadhem A. Aadim and Qutaibah A. Abduljabbar. Annealing Effect on (SnO₂)_0.3:(In₂O₃)_0.7 Solar Cell Prepared by PLD Technique. International Journal of Physics. 2017; 5(4):110-115. doi: 10.12691/ijp-5-4-2

Abstract

Indium tin oxide (ITO) thin films were produced by Q- switched Nd:YAG laser with wavelength (1064 nm) has 800 mJ peak energy on In₂O₃ :SnO₂ target with 0.3 ratio on p-type Si and on porous Si to fabricated solar cell. The as deposited and annealed thin films on glass substrates were characterized by X-ray diffraction Atomic force microscopy (AFM), UV-visible absorbance and Hall effect measurements. Then the fabricated solar cells examined in the dark and under illumination for SnO₂:In₂O₃ /p-Si and SnO₂:In₂O₃/Psi/p-Si annealed and as deposited samples.

Keywords:
solar cell pulse laser porous-Si

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