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S. Chan, M. Li, H. Wei, S. Chen, and C. Kuo1, “The Effect of Annealing on Nanothick Indium Tin Oxide Transparent Conductive Films for Touch Sensors” Journal of Nanomaterials, Vol. 2015 (2015).

has been cited by the following article:

Article

Annealing Effect on (SnO2)0.3:(In2O3)0.7 Solar Cell Prepared by PLD Technique

1Department of Physics, University of Tikrit/College of Education

2Department of Physics, University of Baghdad / College of Sciences


International Journal of Physics. 2017, Vol. 5 No. 4, 110-115
DOI: 10.12691/ijp-5-4-2
Copyright © 2017 Science and Education Publishing

Cite this paper:
Abdulmajeed E. Ibrahim, Kadhem A. Aadim, Qutaibah A. Abduljabbar. Annealing Effect on (SnO2)0.3:(In2O3)0.7 Solar Cell Prepared by PLD Technique. International Journal of Physics. 2017; 5(4):110-115. doi: 10.12691/ijp-5-4-2.

Correspondence to: Qutaibah  A. Abduljabbar, Department of Physics, University of Tikrit/College of Education. Email: qutaibahalrawi5378@gmail.com

Abstract

Indium tin oxide (ITO) thin films were produced by Q- switched Nd:YAG laser with wavelength (1064 nm) has 800 mJ peak energy on In2O3 :SnO2 target with 0.3 ratio on p-type Si and on porous Si to fabricated solar cell. The as deposited and annealed thin films on glass substrates were characterized by X-ray diffraction Atomic force microscopy (AFM), UV-visible absorbance and Hall effect measurements. Then the fabricated solar cells examined in the dark and under illumination for SnO2:In2O3 /p-Si and SnO2:In2O3/Psi/p-Si annealed and as deposited samples.

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