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W. H. Bragg and W. L. Bragg, X Rays and Crystal Structure. London: G. Bell and Sons, LTD., 1918.

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Article

Annealing Effect on (SnO2)0.3:(In2O3)0.7 Solar Cell Prepared by PLD Technique

1Department of Physics, University of Tikrit/College of Education

2Department of Physics, University of Baghdad / College of Sciences


International Journal of Physics. 2017, Vol. 5 No. 4, 110-115
DOI: 10.12691/ijp-5-4-2
Copyright © 2017 Science and Education Publishing

Cite this paper:
Abdulmajeed E. Ibrahim, Kadhem A. Aadim, Qutaibah A. Abduljabbar. Annealing Effect on (SnO2)0.3:(In2O3)0.7 Solar Cell Prepared by PLD Technique. International Journal of Physics. 2017; 5(4):110-115. doi: 10.12691/ijp-5-4-2.

Correspondence to: Qutaibah  A. Abduljabbar, Department of Physics, University of Tikrit/College of Education. Email: qutaibahalrawi5378@gmail.com

Abstract

Indium tin oxide (ITO) thin films were produced by Q- switched Nd:YAG laser with wavelength (1064 nm) has 800 mJ peak energy on In2O3 :SnO2 target with 0.3 ratio on p-type Si and on porous Si to fabricated solar cell. The as deposited and annealed thin films on glass substrates were characterized by X-ray diffraction Atomic force microscopy (AFM), UV-visible absorbance and Hall effect measurements. Then the fabricated solar cells examined in the dark and under illumination for SnO2:In2O3 /p-Si and SnO2:In2O3/Psi/p-Si annealed and as deposited samples.

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