Influence of the Magnetic Field and Optimum Base Thickness of a Series Vertical-Junction Silicon Solar Cell under Polychromatic Illumination and Magnetic Field on Capacitance: Determination of Transition and Dark Capacitances

Dibor FAYE^1, , Pape DIOP¹, Babou DIONE¹ and Mamadou yacine BA¹

¹Physics Department, Faculty of Sciences and Technology, Laboratory of Semiconductors and Solar Energy, University Cheikh Anta Diop, Dakar, Sengal Country

Cite this paper:
Dibor FAYE, Pape DIOP, Babou DIONE and Mamadou yacine BA. Influence of the Magnetic Field and Optimum Base Thickness of a Series Vertical-Junction Silicon Solar Cell under Polychromatic Illumination and Magnetic Field on Capacitance: Determination of Transition and Dark Capacitances. American Journal of Energy Research. 2025; 13(3):80-85. doi: 10.12691/ajer-13-3-1

Abstract

In this paper, we have studied the influence of the optimum thickness of the base of a series vertical-junction solar cell, under polychromatic illumination and magnetic field, on transition and dark capacitances. The expressions for minority carrier density, photovoltage, and capacitance are derived by solving the diffusion equation for minority carriers, based on boundary conditions involving recombination velocities at the junction (Sf) and in the back zone (Sb). The profile of capacitance versus photovoltage for each value of optimum thickness obtained from the magnetic field is then presented, in order to determine the value of transition and dark capacitances for each value of optimum thickness. The evolution of open-circuit photovoltage (Vco) as a function of magnetic field and optimum base thickness is described at the end.

Keywords:
vertical junction silicon solar cell series static regime magnetic field optimum thickness capacity

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