Effect of Low Energy Electrons Radiation on the Series Resistance, Shunt Resistance and Capacitance of an Illuminated PV Silicon Solar Cell

Tchouadep Guy Serge¹, Kpéli Esso Ehanam Tchedre¹, Soro Boubacar^{1, 2,} , Compaore Wendlassida Patrice¹, Zerbo Issa¹ and Zoungrana Martial¹

¹Laboratory of Thermal and Renewable Energies, Université Joseph KI-ZERBO, Ouagadougou, Burkina Faso

²Institut des Sciences et Technologie, Ecole Normale Supérieure, Ouagadougou, Burkina Faso

Cite this paper:
Tchouadep Guy Serge, Kpéli Esso Ehanam Tchedre, Soro Boubacar, Compaore Wendlassida Patrice, Zerbo Issa and Zoungrana Martial. Effect of Low Energy Electrons Radiation on the Series Resistance, Shunt Resistance and Capacitance of an Illuminated PV Silicon Solar Cell. International Journal of Physics. 2024; 12(5):196-201. doi: 10.12691/ijp-12-5-1

Abstract

Some important factors affecting the photoelectric conversion efficiency of solar cells consists of shunt resistance (), series resistance () and capacitance (). In order to improve the performance of silicon solar cell, it is essential either to characterize these parameters or to modify them by using external factors during the operation of the solar cell. In this work we investigate theoretically the behavior of shunt resistance, series resistance and capacitance when illuminated silicon solar cell is irradiated with low energy electrons emitted from Pm-147. By varying the fluence of incident particles up to the value of 3.10¹⁰ cm^-2 we observed an increase in capacitance and a decrease in shunt resistance and series resistance which induces an improvement in the performance of the solar cell. It appeared that the illuminated PV cell in steady state irradiated by low energy electrons behaves like a PV cell in the absence of irradiation but whose electrical parameters vary depending on the fluence of incident particles.

Keywords:
silicon solar cell Beta electron shunt resistance series resistance capacitance low energy electrons Pm-147 source

This work is licensed under a Creative Commons Attribution 4.0 International License. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

References:

[1]	P. Rappaport, “The electron-voltaic effect in p-n junctions induced by beta-particle bombardment”, Physical Review, vol. 93, pp. 246–247, 1954.
[2]	Sergey I. Maximenko, Jim E. Moore, Chaffra A. Affouda and Phillip p. Jenkins ‘‘optimal semiconductors for 3H and 63Ni Betavoltaics’’ Scientific Reports (2019) 9:10892.
[3]	Yue Wang, Xue Li, and Chunjie Wang ‘‘the Study of Resistance and Relative Mechanism of the Low Efficiency Single Silicon Solar Cell’’ 7th International Conference on Management, Education and Information (MEICI 2017). Advances in Intelligent Systems Research, volume 156.
[4]	Priyanka Singh, Nuggehalli M. Ravindra ‘‘Analysis of series and shunt resistance in silicon solar cells using single and double exponential models’’ Emerging Materials Research Volume 1 Issue EMR1, Pages 33–38.
[5]	M. Fortes, E. comesana, J. A. Rodriguez, P. Otero, A. J. Garcia Loureiro‘‘Impact of Series and Shunt resistances in amorphous silicon thin film Solar cells’’ Solar Energy 100(2014)114-123.
[6]	Gokhan Sahin, Genber Kerimli, Fabe Idrissa Barro, Moustapha Sane, Mehmet Hakki Alma ‘‘Performance of conversion efficiency of a crystalline silicon Solar cell with base doping density’’ Results in Physics 7(2017) 4264-4268.
[7]	M. D. Abbott, T. Trupke, H. P. Hartmann, R. Gupta, and O. Breitenstein, “Laser isolation of shunted regions in industrial solar cells,”Progress in Photovoltaics: Research and Applications, vol.15, no.7, pp.613–620, 2007.
[8]	Abdul Kareem, M.S. and Saravanan, M. (2016) A New Method for Accurate Estimation of PV Module Parameters and Extraction of Maximum Power Point under Varying Environmental Conditions. Turkish Journal of Electrical Engineering and Computer Sciences, 24, 2028-2041.
[9]	L. C. Olsen, “Beta irradiation of silicon juction devices:effects on diffusion length,” IEEE Transactions on Nuclear Science, vol.19, pp. 375-381, 1972.
[10]	Claude A. Klein, ‘‘Bandgap Dependence and Related Features of Radiation Ionization Energies in Semiconductors’’ J. Appl. Phys. 39, 2029 (1968).
[11]	Kai Wu, Changhong Dai, Hang Guo ‘‘A Theoretical Study on Silicon Betavoltaics using Ni-63’’ Proceedings of the 2011 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems February 20-23, 2011, Kaohsiung, Taiwan.
[12]	Mbodji, S., Ly, I., Diallo, H.L., Dione, M.M., Diasse, O. and Sissoko, G. (2012) Modeling Study of N+/P Solar Cell Resistances from Single I-V Characteristic Curve Considering the Junction Recombination Velocity (Sf). Research Journal of Applied Sciences, Engineering and Technology, 4, 1-7.
[13]	Martin Wolf and Hans Rauschenbach ‘‘Series Resistance Effects on Solar Cell Measurements’’ Advanced Energy Conversion. Vol. 3, pp. 455-479. Pergamon Press, 1963. Printed in Great Britain.
[14]	Guy Serge Tchouadep, E. K. Tchédré , I. Sourabié , I. Zerbo , and Martial Zoungrana1 ‘‘Modelling the Influence of Low Energy Electrons Emitted from Pm-147 on the Performance of a Silicon PV Cell’’ International Journal of Innovation and Applied Studies ISSN 2028-9324 Vol. 36 No. 1 Apr. 2022, pp. 205-212 © 2022 Innovative Space of Scientific Research Journals http://www.ijias.issr-journals.org/.