Tchouadep Guy Serge¹, Kpéli Esso Ehanam Tchedre¹, Soro Boubacar^{1, 2,}, Compaore Wendlassida Patrice¹, Zerbo Issa¹, Zoungrana Martial¹

Some important factors affecting the photoelectric conversion efficiency of solar cells consists of shunt resistance (), series resistance () and capacitance (). In order to improve the performance of silicon solar cell, it is essential either to characterize these parameters or to modify them by using external factors during the operation of the solar cell. In this work we investigate theoretically the behavior of shunt resistance, series resistance and capacitance when illuminated silicon solar cell is irradiated with low energy electrons emitted from Pm-147. By varying the fluence of incident particles up to the value of 3.10¹⁰ cm^-2 we observed an increase in capacitance and a decrease in shunt resistance and series resistance which induces an improvement in the performance of the solar cell. It appeared that the illuminated PV cell in steady state irradiated by low energy electrons behaves like a PV cell in the absence of irradiation but whose electrical parameters vary depending on the fluence of incident particles.

silicon solar cell, Beta electron, shunt resistance, series resistance, capacitance, low energy electrons, Pm-147 source