[1] | BJ Kim, YW Lee, BG Chae, SJ Yun, SY Oh and HT Kim, «Temperature dependence of the first-order metal-insulator transition in VO2 and programmable critical temperature sensor, Appl. Phys. Lett. 90 (2007) 023515. |
|
[2] | HT Kim, BG Chae, DH Youn, SL Maeng, G Kim, KY Kang and YS Lim, Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices, New. J. Phys. 6 (2004) 52. |
|
[3] | FJ Morin, Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature, Phys. Rev. Lett. 3 (1959) 34. |
|
[4] | IN Zheludev, The Road Ahead for Metamaterials, Science 328 (2010) 582. |
|
[5] | T.Driscoll, H-T Kim, B-G Chae, M Di Ventra and DN Basov, Phase-transition driven memristive system, Appl. Phys. Lett. 95 (2009) 043503. |
|
[6] | W Huang, X Yin, C Huang, Q Wang, T Miao and Y Zhu, Optical switching of a metamaterial by temperature controlling, Appl. Phys. Lett. 96 (2010) 261908. |
|
[7] | BD. Ngom, M. Chaker, I. G. Madiba, S. Khamlich, N. Manyala, O. Nemraoui, R. Madjoe, A. C. Beye and M Maaza, “Competitive Growth Texture of Pulse Laser Deposited VO2 Nanostructures on Glass Substrate”, Acta Materialia Volume 65, 15 February 2014, Pages 32–41 |
|
[8] | AS Barker Jr., HW Verleur, HJ Guggenheim, Infrared Optical Properties of Vanadium Dioxide Above and Below the Transition Temperature, Phys. Rev. Lett 17 (1966) 1286. |
|
[9] | PJ Fillingham, Domain structure and twinning in crystals of vanadium dioxide, J. Appl. Phys. 38 (1967) 4823. |
|
[10] | JB Goodenough, the two components of the crystallographic transition in VO2, J. Solid. State. Chem. 3 (1971) 490. |
|
[11] | MM Qazilbash, KS Burch, D Whisler, D Shrekenhamer, BG Chae, H.T.Kim and D.N.Basov, Correlated metallic state of vanadium dioxide, Phys. Rev. B. 74 (2006) 205118. |
|
[12] | MM Qazilbash, AA Schafgans, KS Burch, SJ Yun, BG Chae, BJ Kim, H.T.Kim, D.N.Basov, electrodynamics of the vanadium oxides VO2 and V2O3, Phys. Rev. B. 77 (2008) 115121. |
|
[13] | PB Barna, M Adamik, fundamental structure forming phenomena of polycrystalline films and the structure zone models, Thin Solid Films 317 (1998) 27. |
|
[14] | I Petrov, PB Barna, L Hultman and JE Greene, microstructural evolution during film growth, J. Vac. Sci. Technol. A 21 (2003) S117. |
|
[15] | M. Adatnik, P.B. Barna “Role of underlayers in the development of evolutionary texture in polycrystalline thin films” Surface and Coatings Techtlology 80 (1996) 109-112. |
|
[16] | GJ Kovacs, D Burger, I Skorupa, H Reuther, R Heller and H Schmidt, effect of the substrate on the insulator–metal transition of vanadium dioxide films, J. Appl. Phys. 109 (2011) 063708. |
|
[17] | G Garry, O Durand and A Lordereau, structural, electrical and optical properties of pulsed laser deposited VO2 thin films on R- and C-sapphire planes, Thin Solid Films. 453-454 (2004) 427-430. |
|
[18] | T-W Chiu, K Tonooka and N Kikuchi, influence of oxygen pressure on the structural, electrical and optical properties of VO2 thin films deposited on ZnO/glass substrates by pulsed laser deposition, Thin Solid Films. 518 (2010) 7441-7444. |
|
[19] | T-W Chiu, K Tonooka and N Kikuchi, Growth of b-axis oriented VO2 thin films on glass substrates using ZnO buffer layer, Appl. Surf. Sci. 256 (2010) 6834-6837. |
|
[20] | M Leoni, T Confenteand P Scardi ,PM2K: a flexible program implementing Whole Powder Pattern Modelling, Z. Kristallogr. Suppl., 23 (2006) 249-254. |
|
[21] | P Scardi and M Leoni, whole powder pattern modelling, Acta. Cryst. A58 (2002) 190-200. |
|
[22] | Li Jian and J Dho, anomalous optical switching and thermal hysteresis behaviors of VO2 films on glass substrate, Applied. Phys. Lett. 99 (2011) 231909. |
|
[23] | A Kaushal, N Choudhary, N Kaur and D Kaur, VO2-WO3 nanocomposite thin films synthesized by pulsed laser deposition technique, Appl. Surf. Sci. 257 (2011) 8937- 8944. |
|
[24] | S Lu, L Hou and F Gan Surface analysis and phase transition of gel-derived VO2 thin films, Thin Solid Films, 353 (1999) 40-44. |
|
[25] | X-J Wang, C-J Liang, K-P Guan, D-H Li, Y-X Nie et al, Surface oxidation of vanadium dioxide ¯lms prepared by radio frequency magnetron sputtering, Chinese. Phys. B. 17 (2008) 3514. |
|
[26] | P Gillet, A Le Cleach, and M Madon High-temperature raman spectroscopy of SiO2 and GeO2 Polymorphs: Anharmonicity and thermodynamic properties at high-temperaturesJ. Geophys. Res. 95 (1990) 21635-21655. |
|
[27] | RJ Hemley, pressure dependence of Raman spectra of SiO2 polymorphs: alpha-quartz, coesite and stishovite, in: MH Manghnani, Y Syono (Eds.). High-pressure Research in Mineral Physics, Tokyo/Washington DC: Terra Scientific Publishing Co and AGU. (1987) 347-360. |
|
[28] | C Cheng, K Liu, B Xiang, J Suh and J Wu, ultra-long, free-standing, single-crystalline vanadium dioxide micro/nanowires grown by simple thermal evaporation, Appl. Phys. Lett. 100 (2012) 103111. |
|
[29] | JC Parker, raman scattering from VO2 single crystals: A study of the effects of surface oxidation, Phys. Rev. B. 42 (1990) 3164. |
|
[30] | JF Pócza, Á. Barna, PB Barna, I Pozsgai, G Radnóczi: in-situ electron microscopy of thin film growth, Proc. 6th Int. Vacuum Congress, Kyoto (1974), Jap. Journal of Applied Physics, Supplement 2, (1974) Part 1, 525-532. |
|
[31] | P.B. Barna, G. Radnóczi, F.M. Reicha: Surface growth topography of grain boundaries in Al thin films, Vacuum 38. (1988), 527-532 |
|
[32] | M. Menyhard, L. Uray, Grain boundary segregation produced by grain boundary movement, Scripta Metall. 17 (1983), p.1195 |
|
[33] | L Uray and M Menyhard, the segregation of iron in tungsten, Phys. Status. Solidi. A 84 (1984) 65-72. |
|
[34] | PB Barna, M Adamik, growth mechanisms of polycrystalline thin films, in: FC Matacotta, G Ottaviani (Eds.), Science and Technology of Thin Films. Singapore: World Scientific Publications. (1995). |
|