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American Journal of Nanomaterials. 2023, 11(1), 41-50
DOI: 10.12691/ajn-11-1-3
Open AccessReview Article

Review of Recent Advances of GaN Nanostructured Based Devices

M. Abdulrahman1, A. Khalil1 and Ahmed M. Nahhas1,

1Department of Electrical Engineering, Faculty of Engineering and Islamic Architecture, Umm Al Qura University, Makkah, Saudi Arabia

Pub. Date: February 06, 2023
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Cite this paper:
M. Abdulrahman, A. Khalil and Ahmed M. Nahhas. Review of Recent Advances of GaN Nanostructured Based Devices. American Journal of Nanomaterials. 2023; 11(1):41-50. doi: 10.12691/ajn-11-1-3

Abstract

This paper is intended to provide an overview of recent advances of GaN based nanostructured materials and devices. Because of its unique electrical, optical, and structural properties, GaN has sparked significant interest in the field of wide bandgap semiconductor research. Because of its higher surface-to-volume ratio than thin films, GaN nanostructured material offers numerous advantages for nanodevices. The ability of GaN nanostructured material to absorb ultraviolet (UV) radiation is invaluable in many optical applications. GaN nanostructured-based devices have recently received a lot of interest due to their numerous potential uses. GaN has been employed as a nanomaterial in a variety of devices, including UV photodetectors, light-emitting diodes, solar cells, and transistors. The most current developments in GaN-based devices are presented and reviewed. The performance of many device architectures demonstrated on GaN is presented. The structural, electrical, and optical characteristics are also discussed.

Keywords:
gallium nitride (GaN) nanostructured light emitting diodes nanowires ultraviolet doping

Creative CommonsThis work is licensed under a Creative Commons Attribution 4.0 International License. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

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