Review of AlGaN/GaN HEMTs Based Devices

Ahmed M. Nahhas^1,

¹Department of Electrical Engineering, Faculty of Engineering and Islamic Architecture, Umm Al Qura University, Makkah, Saudi Arabia

Cite this paper:
Ahmed M. Nahhas. Review of AlGaN/GaN HEMTs Based Devices. American Journal of Nanomaterials. 2019; 7(1):10-21. doi: 10.12691/ajn-7-1-2

Abstract

This paper presents a review of the recent advances of the AlGaN/GaN high-electron-mobility transistors (HEMTs) based devices. The AlGaN/GaN HEMTs have attracted potential for high frequency, voltage, power, temperature, and low noise applications. This is due to the superior electrical, electronic properties, high electron velocity of the GaN. These properties include the GaN wide band gap energy, electrical, optical and structural properties. The based structures of GaN such as AlGaN/GaN are driving the interest in the research areas of GaN HEMTs. Recently, the AlGaN/GaN HEMTs have gained a great potential in radio frequency (RF) and power electronics (PE) based devices and applications. The recent aspects of the AlGaN/GaN HEMTs devices are presented and discussed. The performance of different device demonstrated based on AlGaN/GaN HEMTs are reviewed. The structural, electrical, and optical properties of these devices are also reviewed.

Keywords:
Gallium Nitride (GaN) HEMTs Traps Defects Aluminum gallium nitride/gallium nitride (AlGaN/GaN) Aluminum Nitride (AlN)

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