American Journal of Materials Science and Engineering. 2016, 4(2), 20-25
DOI: 10.12691/ajmse-4-2-1
Open AccessArticle
K. Talla1, 2, , O. Sakho1, P. D. Tall1, C. B. Ndao1, E. H. O. Gueye1, M. B. Gaye1, J. K. Dangbegnon2, B. D. Ngom1, , J. R. Botha2 and A. C. Beye1
1Groupe de physique du Solide et Sciences des Matériaux, Faculté des Sciences et Techniques Université Cheikh Anta Diop de Dakar (UCAD), B.P. 25114 Dakar-Fann Dakar (Sénégal)
2Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth, 6031, South Africa
Pub. Date: January 03, 2017
Cite this paper:
K. Talla, O. Sakho, P. D. Tall, C. B. Ndao, E. H. O. Gueye, M. B. Gaye, J. K. Dangbegnon, B. D. Ngom, J. R. Botha and A. C. Beye. Influence of Growth Parameters on the Structural, Morphological and optical Properties of MgxZn1-xO Prepared by Metal Organic Chemical Vapor Deposition. American Journal of Materials Science and Engineering. 2016; 4(2):20-25. doi: 10.12691/ajmse-4-2-1
Abstract
The influence of growth parameters on the structural, morphological and optical properties of MgxZn1-xO grown on sapphire substrate by metal organic chemical vapor deposition is studied. Pure oxygen gas is used as oxidant, bis-methyl-cyclopentadienyl magnesium ((MeCp)2Mg) and diethyl zinc are used as Mg and Zn source, respectively. The growth temperature between and 320°C and 620°C, the VI/II (O/Mg, Zn) ratio ranging from 60 to 960 and the growth rate from 0.5 to 3.3 m/h, are systematically varied to determine their effects upon the above mentioned physical properties. Structural, morphological and optical properties of the thin films are characterized by means of X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM) and Photoluminescence (PL). Experimental results indicate that the growth conditions are essential for engineering the growth of MgxZn1-xO. The optimum substrate temperature is found to be 420°C for the growth of MgxZn1-xO with a solid composition x below 30%, composition above which a phase segregation has been previously observed. With increasing temperature, strong parasitic reaction between (MeCp)2Mg and oxygen is found to occur before they rich the substrate.Keywords:
MgZnO ternary alloys MOCVD bis-methyl-cyclopentadienyl magnesium ((MeCp)2Mg) Columnar growth
This work is licensed under a Creative Commons Attribution 4.0 International License. To view a copy of this license, visit
http://creativecommons.org/licenses/by/4.0/
Figures
References:
[1] | Y. Hu, B. Cai, Z. Hu, Y. Liu, S. Zhang, H. Zeng, Current Applied Physics 15 (2015) 423-428. |
|
[2] | D. Jiang, J. Qina, X. Zhang, Z. Bai, D. Shen, Materials Science and Engineering B 176 (2011) 736-739. |
|
[3] | X. Wang, K. Saito, T. Tanaka, M. Nishio, Q. Guo, J. of Alloys and Compounds 627 (2015) 383-387. |
|
[4] | S. Han, Y.K. Shao, Y.M. Lu, P.J. Cao, F. Jia, Y.X. Zeng, W.J. Liu, D.L. Zhu, X.C. Ma, Journal of Alloys and Compounds 559 (2013) 209-213. |
|
[5] | K. Tala, J. K.Dangbegnon, M. C. Wagener, J. Weber, and J. R. Botha, J. Cryst. Growth, vol. 315, p. 297-300, 2011. |
|
[6] | A. Ohtomo, M. Kawasaki, T. Koida, K. Masubuchi, H. Koinuma, Y. Sakurai, Y. Yoshida, T. Yasuda, Y. Segawa, Appl. Phys. Lett. 72 (1998). 2466. |
|
[7] | N.B. Chen, C.H. Sui, Sci. Eng. B, Solid-State Mater. Adv. Technol. 126 (2006) 16. |
|
[8] | A. Lusson, N. Hanèche, C. Thiandoume, V. Sallet, and P. Galtier, J. Vac. Sci. Technol. B, vol. 23, pp. 1755-1759, 2009. |
|
[9] | B. K. S. K. M. a. H. K. C. D. C. Kim, Thin Solid Films, vol. 518, pp. 2975-2979, 2010. |
|
[10] | G. B. Stringfellow, Organometallic Vapor-Phase Epitaxy: Theory and Practice, San Diego: Academic Press, Inc., 1989. |
|
[11] | M. R. Leys, H. Titze, L. Samuelson, and J. Petruzzello, J. Cryst. Growth , vol. 93, p. 504, 1988. |
|