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Y. Hu, B. Cai, Z. Hu, Y. Liu, S. Zhang, H. Zeng, Current Applied Physics 15 (2015) 423-428.

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Article

Influence of Growth Parameters on the Structural, Morphological and optical Properties of MgxZn1-xO Prepared by Metal Organic Chemical Vapor Deposition

1Groupe de physique du Solide et Sciences des Matériaux, Faculté des Sciences et Techniques Université Cheikh Anta Diop de Dakar (UCAD), B.P. 25114 Dakar-Fann Dakar (Sénégal)

2Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth, 6031, South Africa


American Journal of Materials Science and Engineering. 2016, Vol. 4 No. 2, 20-25
DOI: 10.12691/ajmse-4-2-1
Copyright © 2017 Science and Education Publishing

Cite this paper:
K. Talla, O. Sakho, P. D. Tall, C. B. Ndao, E. H. O. Gueye, M. B. Gaye, J. K. Dangbegnon, B. D. Ngom, J. R. Botha, A. C. Beye. Influence of Growth Parameters on the Structural, Morphological and optical Properties of MgxZn1-xO Prepared by Metal Organic Chemical Vapor Deposition. American Journal of Materials Science and Engineering. 2016; 4(2):20-25. doi: 10.12691/ajmse-4-2-1.

Correspondence to: B.  D. Ngom, Groupe de physique du Solide et Sciences des Matériaux, Faculté des Sciences et Techniques Université Cheikh Anta Diop de Dakar (UCAD), B.P. 25114 Dakar-Fann Dakar (Sénégal). Email: KharounaTalla@gmail.com, bdngom@gmail.com

Abstract

The influence of growth parameters on the structural, morphological and optical properties of MgxZn1-xO grown on sapphire substrate by metal organic chemical vapor deposition is studied. Pure oxygen gas is used as oxidant, bis-methyl-cyclopentadienyl magnesium ((MeCp)2Mg) and diethyl zinc are used as Mg and Zn source, respectively. The growth temperature between and 320°C and 620°C, the VI/II (O/Mg, Zn) ratio ranging from 60 to 960 and the growth rate from 0.5 to 3.3 m/h, are systematically varied to determine their effects upon the above mentioned physical properties. Structural, morphological and optical properties of the thin films are characterized by means of X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM) and Photoluminescence (PL). Experimental results indicate that the growth conditions are essential for engineering the growth of MgxZn1-xO. The optimum substrate temperature is found to be 420°C for the growth of MgxZn1-xO with a solid composition x below 30%, composition above which a phase segregation has been previously observed. With increasing temperature, strong parasitic reaction between (MeCp)2Mg and oxygen is found to occur before they rich the substrate.

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