K. Talla1, 2,
,
O. Sakho1,
P. D. Tall1,
C. B. Ndao1,
E. H. O. Gueye1,
M. B. Gaye1,
J. K. Dangbegnon2,
B. D. Ngom1,
,
J. R. Botha2,
A. C. Beye1 1Groupe de physique du Solide et Sciences des Matériaux, Faculté des Sciences et Techniques Université Cheikh Anta Diop de Dakar (UCAD), B.P. 25114 Dakar-Fann Dakar (Sénégal)
2Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth, 6031, South Africa
American Journal of Materials Science and Engineering.
2016,
Vol. 4 No. 2, 20-25
DOI: 10.12691/ajmse-4-2-1
Copyright © 2017 Science and Education PublishingCite this paper: K. Talla, O. Sakho, P. D. Tall, C. B. Ndao, E. H. O. Gueye, M. B. Gaye, J. K. Dangbegnon, B. D. Ngom, J. R. Botha, A. C. Beye. Influence of Growth Parameters on the Structural, Morphological and optical Properties of Mg
xZn
1-xO Prepared by Metal Organic Chemical Vapor Deposition.
American Journal of Materials Science and Engineering. 2016; 4(2):20-25. doi: 10.12691/ajmse-4-2-1.
Correspondence to: B. D. Ngom, Groupe de physique du Solide et Sciences des Matériaux, Faculté des Sciences et Techniques Université Cheikh Anta Diop de Dakar (UCAD), B.P. 25114 Dakar-Fann Dakar (Sénégal). Email:
KharounaTalla@gmail.com, bdngom@gmail.comAbstract
The influence of growth parameters on the structural, morphological and optical properties of MgxZn1-xO grown on sapphire substrate by metal organic chemical vapor deposition is studied. Pure oxygen gas is used as oxidant, bis-methyl-cyclopentadienyl magnesium ((MeCp)2Mg) and diethyl zinc are used as Mg and Zn source, respectively. The growth temperature between and 320°C and 620°C, the VI/II (O/Mg, Zn) ratio ranging from 60 to 960 and the growth rate from 0.5 to 3.3 m/h, are systematically varied to determine their effects upon the above mentioned physical properties. Structural, morphological and optical properties of the thin films are characterized by means of X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM) and Photoluminescence (PL). Experimental results indicate that the growth conditions are essential for engineering the growth of MgxZn1-xO. The optimum substrate temperature is found to be 420°C for the growth of MgxZn1-xO with a solid composition x below 30%, composition above which a phase segregation has been previously observed. With increasing temperature, strong parasitic reaction between (MeCp)2Mg and oxygen is found to occur before they rich the substrate.
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