Influence of the Recombination Assisted by Tunneling Effect and Influence of the Surface Treatment on the Electric Performances of Cu-Rich Solar Cells Based on Cu(In,Ga)Se₂

Mouhamadou M. Soce¹, Alain K. Ehemba^1, , Ousmane Diagne¹, Djimba Niane¹ and Moustapha Dieng¹

¹Physics Department, Faculty of Science and Technology, Laboratory of Semiconductors and Solar Energy, University Cheikh Anta Diop, Dakar

Cite this paper:
Mouhamadou M. Soce, Alain K. Ehemba, Ousmane Diagne, Djimba Niane and Moustapha Dieng. Influence of the Recombination Assisted by Tunneling Effect and Influence of the Surface Treatment on the Electric Performances of Cu-Rich Solar Cells Based on Cu(In,Ga)Se₂. American Journal of Energy Research. 2017; 5(2):51-56. doi: 10.12691/ajer-5-2-4

Abstract

In the paper, we study the influence of the tunneling effect recombination inside the interface absorber/ CdS and the effect of surface treatment in the absorber of solar cell CIGS Cu-rich. This study will be done with neutrals defects and charged defects. Whatever the charge of the defect, we noted that the cell efficiency decreases with this recombination and increases with the surface treatment. We have also observed that this surface treatment is more efficient and the recombination by tunnel effect is much more harmful when the defects are charged.

Keywords:
tunneling effect recombination charged defect neutral defect and surface treatment.

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