Laser Effect on the Activation Energies, Bulk Etch Rate and Track Etch Rate of CR-39 Polymeric Detector

Ahmed A. Ibrahim^1, and Sozan Bhaa-al-deen¹

¹Department Physics, College of Science, Kirkuk University, Kirkuk, Iraq

Cite this paper:
Ahmed A. Ibrahim and Sozan Bhaa-al-deen. Laser Effect on the Activation Energies, Bulk Etch Rate and Track Etch Rate of CR-39 Polymeric Detector. International Journal of Physics. 2016; 4(1):1-4. doi: 10.12691/ijp-4-1-1

Abstract

The aim of this paper is to find the effect of Nd: YAG laser of wavelength (532 nm), laser power 150 MW on the CR-39 polymer. Twenty three detectors were divided in to three sets. The first set (ten detectors) (post-exposed) was first exposed to alpha radiation from ²⁴¹Am source at 3MeV and then treated in air with laser at different exposure time started from 10 minutes to 100 minutes with ten minutes differ between them (alpha + laser). For the second set (ten detectors) (pre-exposed), the process was reversed (laser +alpha) under the same conditions, for the last set (three detectors) (un-exposed to laser), used as a control set, was irradiated with an alpha source (241Am). Alpha track diameters, bulk etching velocity (V_B), track etching velocity (V_T), etching efficiency (η), etching ratio (V) were determined. The activation energies of bulk etch (E_B) and track etch (E_T) for unexposed, post- exposed and pre-exposed are found to be equal to 1.10, 0.92, 0.82 eV and 1.07, 0.86, 0.79 eV respectively.

Keywords:
nuclear track detectors CR-39 activation energy of bulk etch (EB) and track etch (ET) etching conditions

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