Influence of the Doping Rate of the CIGSe Layer on the Recombination-generation Mechanisms with 25 nm Incorporation of a KF Layer on a CIGSe Solar Cell

Djimba Niane^1, , Alain K. Ehemba¹, Salif Cissé¹, Ousmane Diagne¹ and Moustapha Dieng¹

¹Physics Department, Faculty of Science and Technology, Laboratory of Semiconductors and Solar Energy, University Cheikh Anta Diop, Dakar

Cite this paper:
Djimba Niane, Alain K. Ehemba, Salif Cissé, Ousmane Diagne and Moustapha Dieng. Influence of the Doping Rate of the CIGSe Layer on the Recombination-generation Mechanisms with 25 nm Incorporation of a KF Layer on a CIGSe Solar Cell. American Journal of Energy Research. 2018; 6(1):30-34. doi: 10.12691/ajer-6-1-5

Abstract

In this work, we studied the influence of the doping rate of the CIGSe layer on the recombination-generation mechanisms with 25 nm incorporation of a KF layer on a CIGSe solar cell. The different doping taken are N_b=10¹⁵cm^-3, N_b=10¹⁶cm^-3 et N_b=10¹⁷cm^-3. Numerical modeling with the SCAPS-1D software shows that the generation rate varies slightly while that of recombination is very important, explained by a strong presence of traps in the CIGSe bandgap.

Keywords:
Solar cells CIGSe KF Doping Generation Recombination SCAPS-1D

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