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Schockley. W, Read W.T, “Statistics of the Recombinations of Holes and Electrons” Physical Review, 1952, vol 87, n°5, p. 835-842.

has been cited by the following article:

Article

Influence of the Doping Rate of the CIGSe Layer on the Recombination-generation Mechanisms with 25 nm Incorporation of a KF Layer on a CIGSe Solar Cell

1Physics Department, Faculty of Science and Technology, Laboratory of Semiconductors and Solar Energy, University Cheikh Anta Diop, Dakar


American Journal of Energy Research. 2018, Vol. 6 No. 1, 30-34
DOI: 10.12691/ajer-6-1-5
Copyright © 2018 Science and Education Publishing

Cite this paper:
Djimba Niane, Alain K. Ehemba, Salif Cissé, Ousmane Diagne, Moustapha Dieng. Influence of the Doping Rate of the CIGSe Layer on the Recombination-generation Mechanisms with 25 nm Incorporation of a KF Layer on a CIGSe Solar Cell. American Journal of Energy Research. 2018; 6(1):30-34. doi: 10.12691/ajer-6-1-5.

Correspondence to: Djimba  Niane, Physics Department, Faculty of Science and Technology, Laboratory of Semiconductors and Solar Energy, University Cheikh Anta Diop, Dakar. Email: djimbasbn@gmail.com

Abstract

In this work, we studied the influence of the doping rate of the CIGSe layer on the recombination-generation mechanisms with 25 nm incorporation of a KF layer on a CIGSe solar cell. The different doping taken are Nb=1015cm-3, Nb=1016cm-3 et Nb=1017cm-3. Numerical modeling with the SCAPS-1D software shows that the generation rate varies slightly while that of recombination is very important, explained by a strong presence of traps in the CIGSe bandgap.

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