Analysis of Strained Al_0.15In_0.22Ga_0.63As/GaAs Graded Index–Separate Confinement Lasing Nano-heterostructure

Swati Jha¹, Meha Sharma¹, H. K. Nirmal², Pyare Lal², F. Rahman³ and P. A. Alvi^2,

¹Department of Electronics, Banasthali Vidyapith, Rajasthan, India

²Department of Physics, Banasthali Vidyapith, Rajasthan, India

³Department of Physics, Aligarh Muslim University, Aligarh, U.P., India

Cite this paper:
Swati Jha, Meha Sharma, H. K. Nirmal, Pyare Lal, F. Rahman and P. A. Alvi. Analysis of Strained Al_0.15In_0.22Ga_0.63As/GaAs Graded Index–Separate Confinement Lasing Nano-heterostructure. Journal of Optoelectronics Engineering. 2015; 3(1):1-6. doi: 10.12691/joe-3-1-1

Abstract

The paper deals with a theoretical insight into the various characteristics of a 0.89 μm Al_0.15In_0.22Ga_0.63As/GaAs strained single quantum well based Graded Index (GRIN) - separate confinement lasing nano-heterostructure. Major emphasis has been laid on the optical and modal gain. Both these gain have been simulated with respect to lasing wavelength, photon energy and current density. In this paper, we have also drawn a comparative picture of the two polarization modes i.e Transverse Electric (TE) and Transverse Magnetic (TM). The maximum optical gain has been observed to be 5557.18 cm^-1 at the lasing wavelength ~ 0.90 μm and photonic energy ~ 1.36 eV in TE mode and it is only 2760.70 cm^-1 at the lasing wavelength ~ 0.78 μm and at photonic energy ~ 1.58 eV in TM mode. However, the maximum modal gain has been observed to be 54.65 cm^-1 in TE mode and it is 27.16 cm^-1 in TM mode at the same lasing wavelengths and photonic energies respectively at 298 K. The behavior of quasi Fermi levels for the conduction band and valence band has also been studied. Other important parameters like gain compression, differential gain and refractive index profile have also been simulated with respect to carrier density. Anti-guiding factor has been plotted against current density to observe its behavior in order to support the explanation of optical gain simulated.

Keywords:
optical gain anti-guiding factor modal gain current density

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References:

[1]	Y.S. Yong, H.Y. Wong, H.K. Yow, M. Sorel, “Systematic study on the confinement structure design of 1.5 μm InGaAlAs/InP multiple quantum well lasers”, Laser Phys. 20(4),811-815, (2010).
[2]	J. M. Gaines, “Compound Semiconductor Epitaxy”, edited by C. W. Tu, L. A. Kolodziejshi, and U. R. McGray, MRS Symposia Proceedings No. 340, Materials Research Society, Pittsburgh, p. 419,(1994).
[3]	C. Weisbuch and B. Vinter, “Quantum Semiconductor Heterostructures”, Academic, New York, (1993).
[4]	W. T. Tsang, “Extremely low threshold AlGaAs modified multiquantum-well heterostructure lasers grown by MBE”, Appl. Phys. Lett. 39, 786 (1981).
[5]	W. T. Tsang, “Extremely low threshold (AlGa)As graded‐index waveguide separate‐confinement heterostructure lasers grown by molecular beam epitaxy”, Appl. Phys. Lett. 40, 217 (1982).
[6]	D. Kasemset, C.-S. Hong, N. B. Patel and P. D. Dapkus,“Graded barrier single quantum well lasers — theory and experiment”, IEEE J. Quantum Electron., Vol. QE-19, pp. 1025-30 (1983).
[7]	S.W. Ryu and P.D. Dapkus, “Low threshold current density GaAsSb quantum well (QW) lasers grown by metal organic chemical vapour deposition on GaAs substrates”, Electron. Lett., Vol. 36, No. 16, pp. 1387- 1388, (2000).
[8]	J.C. Yong, J.M. Rorison, I.H. White “1.3 μm quantum well InGaAsP, AlGaInAs and InGaAsN laser material gain: a theoretical study”, IEEE J. Quantum Electroxn, Vol. 38, No. 12, pp. 1553-1564 (2002).
[9]	D. P. Sapkota, M.S. Kayastha and K. Wakita, “Proposed Model of Electric Field Effects in High-Purity GaAs at Room Temperature”, Opt. Quant Electron., Vol. 4, No. 5,pp. 99-103 (2014).
[10]	Carsten Rohr, Paul Abbott, Ian Ballard, James P. Connolly, and Keith W. J. Barnham, Massimo Mazzer, Chris Button, Lucia Nasi, Geoff Hill and John S. Roberts, Graham Clarke, Ravin Ginige, “InP based lattice-matched InGaAsP and strain-compensated InGaAs∕InGaAs quantum well cells for thermohotovoltaic applications”, J. of Appl. Phys., 100, 114510, (2006).
[11]	Pyare Lal, Shobhna Dixit, S. Dalela, F. Rahman, and P. A. Alvi, “Gain Simulation of lasing nano-heterostructure Al0.10Ga0.90As/GaAs” Physica E: Low dimensional Systems and Nanostructures, 46, pp. 224-231, (2012).
[12]	P.A. Alvi, Pyare Lal, Rashmi Yadav, Shobhna Dixit, S. Dalela, “Modal Gain characteristics of InGaAlAs/InP lasing nano-heterostructures.” Superlattices and Microstructures, 61, 1-12 (2013).
[13]	G. P. Agrawal, “Fiber-Optic Communication Systems”, 4th Edition, Wiley Interscience, Chap. 3, (2010).
[14]	C.A. Wang, J. N. Walpole, L. J. Missaggia, “AlInGaAs/AlGaAs separate‐confinement heterostructure strained single quantum well diode lasers grown by organometallic vapor phase epitaxy”, Appl. Phy. Lett., 58, 2208, (1991).
[15]	Robert N. Hall, G. E. Fenner, J. D. Kingsley, T. J. Soltys, and R. O. Carlson, “Coherent Light Emission From GaAs Junctions”, Physical Review Letters 9, pp. 366-369, (1962).
[16]	T. D. Moustakas and A. Bhattacharyya, “Experimental Evidence that the Plasma-Assisted MBE Growth of Nitride Alloys is a Liquid Phase Epitaxy Process,” ECS Transactions: 219th ECS Meeting, vol. 35, no. 6, pp. 63-71, (2011).
[17]	T. D. Moustakas and A. Bhattacharyya, “The Role of Liquid Phase Epitaxy During Growth of AlGaN by MBE,” Physica Status Solidi C, vol. 9, no. 3-4, pp. 580-583, (2011).
[18]	A. Bhattacharyya, T. D. Moustakas, L. Zhou, D. J. Smith, and W. Hug, “Deep Ultraviolet Emitting AlGaN Quantum Wells with High Internal Quantum Efficiency,” Applied Physics Letters, vol. 94, no. 18, article no. 181907, (2009).
[19]	Y. Liao, C. Thomidis, C.-K. Kao, and T. D. Moustakas, “AlGaN Based Deep Ultraviolet Light Emitting Diodes with High Internal Quantum Efficiency Grown by Molecular Beam Epitaxy,” Applied Physics Letters, vol. 98, no. 8, article no. 081110, (2011).
[20]	T. D. Moustakas, Y. Liao, C-k. Kao, C. Thomidis, A. Bhattacharyya, D. Bhattarai and A. Moldawer, “Deep UV-LEDs with High IQE Based on AlGaN Alloys with Strong Band Structure Potential Fluctuations,” Proceedings of SPIE, vol. 8278, (2012).
[21]	Pyare Lal, Rashmi Yadav, Meha Sharma, F. Rahman, S. Dalela, P. A. Alvi, “Qualitative analysis of gain spectra of InGaAlAs/InP lasing nano-heterostructure” International Journal of Modern Physics B, Vol. 28, No. 29 (2014) pp. 1450206.
[22]	Sandra R. Selmic, Tso-Min Chou, Jiehping Sih, Jay B. Kirk, Art Mantie, Jerome K. Butler, Gary A. Evans, IEEE J. On Selected Topics in Quantum Electronics, 7, No. 2 (2001).
[23]	Rashmi Yadav, Pyare Lal, F. Rahman, S. Dalela, P. A. Alvi, “Investigation of material gain of In0.90Ga0.10As0.59P0.41/InP lasing nano-heterostructure” International Journal of Modern Physics B, Vol. 28, No. 10 (2014) pp. 1450068.
[24]	G. D. Mahan, L. E. Oliveira, “Quasi-Fermi-levels in quantum-well photoluminescence,” Phys. Rev. B 44, 3150 (1991).