Structural Characterization of P-type SnO₂: Ga and Sb-co-doped SnO2:Ga Thin Films Prepared by Sol-Gel Dip-Coating Method for Potential Optoelectronic Applications

Sally Kemuma Gichana^1, , David M. Mulati¹ and Timonah N. Soitah¹

¹Department of Physics: Jomo Kenyatta University of Agriculture and Technology (JKUAT). P.O BOX 62000-00200, NAIROBI-KENYA

Cite this paper:
Sally Kemuma Gichana, David M. Mulati and Timonah N. Soitah. Structural Characterization of P-type SnO₂: Ga and Sb-co-doped SnO2:Ga Thin Films Prepared by Sol-Gel Dip-Coating Method for Potential Optoelectronic Applications. Journal of Materials Physics and Chemistry. 2024; 12(2):37-41. doi: 10.12691/jmpc-12-2-3

Abstract

This paper delves into the synthesis and characterization of p-type Transparent Conducting Oxides (TCOs), with a specific focus on Gallium-doped tin oxide (SnO2:Ga)and Antimony co-doped Gallium-tin oxide thin films. The films are deposited on blue microscope glass substrates utilizing the sol-gel dip-coating method. The study tackles the challenges related to the application of p-type TCOs, highlighting advancements in electrical performance compared to their n-type counterparts. Structural characterization through X-ray diffraction indicates both crystalline and amorphous nature of the films. Sharp and narrow diffraction peaks confirm the well-defined doped phases of Ga and Sb at atomic substitutional sites of SnO2. Different phases are identified for pure SnO2and Ga-doped SnO2 films. The preferential orientation shifts with doping concentrations. Sb-co-doped SnO2 films show the highest peak intensities. The average crystallite sizes of the thin films increase with doping concentrations, ranging from 19.83 nm to 32.24 nm for Ga-doped films and 33.91 nm to 40.88 nm for Sb-co-doped films. The structural analyses suggest that SnO2:Ga and Sb-co-doped SnO2:Ga thin films are suitable p-type TCO materials for optoelectronic applications. Overall, this research contributes valuable insights into improving the performance of p-type TCOs and addresses the limitations associated with their characterization.

Keywords:
P-type Thin Films Sol-Gel Structural properties

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