Simulation of Single Crystalline CdZnTe Solidification Process

A.M. Martínez^1, , M.R. Rosenberger², A.B. Trigubó^{3, 4}, R.L. D´Elía⁴ and E.A. Heredia⁴

¹CEDIT-CeDITec, Félix de Azara 1890 5º piso, Posadas, Pcia. de Misiones, Argentina

²IMAM-CONICET-UNaM, FEQYN, Félix de Azara 1552, Posadas, Pcia. de Misiones, Argentina

³FRBA-UTN, Medrano 951, CABA, Argentina

⁴UNIDEF- MINDEF- CITEDEF, Juan Bautista de La Salle 4397, V. Martelli, Pcia de Bs.As., Argentina

Cite this paper:
A.M. Martínez, M.R. Rosenberger, A.B. Trigubó, R.L. D´Elía and E.A. Heredia. Simulation of Single Crystalline CdZnTe Solidification Process. Journal of Materials Physics and Chemistry. 2014; 2(1):9-14. doi: 10.12691/jmpc-2-1-2

Abstract

Single crystals of Cd_1-xZn_xTe (0 ≤ x ≤ 0.1) (CZT/CdZnTe) are used in manufacture of gamma and X-ray detectors and as substrates for epitaxial growth of HgCdTe. Computer simulation for the solidification of CZT was performed using finite elements. The simulation results indicate that a lower translation speed of the quartz ampoule within the Bridgman furnace determines a lower concavity of the liquid interface which assures a good crystalline quality. When the rate is 3.32 mm/h the concavity is 58% greater than for a speed of 0.50 mm/h. It was experimentally found that when growing at low speed, 1.66 mm/h, the process is more stable and improves the crystalline quality due that only two grains were generated in CZT ingots. Meanwhile a faster growth speed- 3.32 mm/h- generates a large amount of grains in the CZT ingot.

Keywords:
CdZnTe Bridgman method numerical simulation finite element method single crystal growth II-VI Semiconductors

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