Structural and Optical Properties of Different Composition of Se₉₀Cd_10-xIn_x thin Films by Vacuum Evaporation Technique

D.K. Dwivedi^1, , Nitesh Shukla¹, H.P. Pathak¹ and Kedar Singh²

¹Amorphous Semiconductor Research Lab, Department of Physics, Madan Mohan Malaviya University of Technology, Gorakhpur

²Department of Physics, Banaras Hindu University, Varanasi

Cite this paper:
D.K. Dwivedi, Nitesh Shukla, H.P. Pathak and Kedar Singh. Structural and Optical Properties of Different Composition of Se₉₀Cd_10-xIn_x thin Films by Vacuum Evaporation Technique. American Journal of Materials Science and Engineering. 2014; 2(2):13-17. doi: 10.12691/ajmse-2-2-1

Abstract

Se₉₀Cd_10-xIn_x (x=2,4,6 &8) thin films have been deposited onto a chemically cleaned glass substrate by thermal evaporation technique under vacuum. The effects of different doping concentration of In have been investigated X-ray diffraction technique has been employed to investigate the structural characterization of the films. X-ray diffraction measurement indicates that the Se₉₀Cd_10-xIn_x films possess polycrystalline structure. Absorption spectra measured at normal incidence in the wavelength range 400-1100 nm have been analyzed for the optical characterization of the thin films under consideration. The optical constants (absorption coefficient (α), extinction coefficient (k)) and optical band gap E_g have been calculated. The absorption coefficient (α) is found to increase with photon energy. It has been found that extinction coefficient (K) decreases with increase in wavelength (λ). Optical band gap (E_g) has also been evaluated for the Se₉₀Cd_10-xIn_x thin films with different compositions. It has been found that optical band gap (E_g) increases with In incorporation in Se₉₀Cd_10-xIn_x alloys.

Keywords:
Chalcogenide glasses amorphous semiconductors thin films optical properties optical band gap

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