Determination of Electrical Parameters of a CIGS-Based Solar Cell under the Influence of a KF Layer from Impedance Spectroscopy

Djimba Niane^1, , Ibrahima Wade¹, Ousmane Diagne¹, Mouhamadou M.Socé¹ and Moustapha Dieng¹

¹Physics Department, Faculty of Science and Technology, Laboratory of Semiconductors and Solar Energy, University Cheikh Anta Diop, Dakar

Cite this paper:
Djimba Niane, Ibrahima Wade, Ousmane Diagne, Mouhamadou M.Socé and Moustapha Dieng. Determination of Electrical Parameters of a CIGS-Based Solar Cell under the Influence of a KF Layer from Impedance Spectroscopy. American Journal of Energy Research. 2018; 6(2):42-46. doi: 10.12691/ajer-6-2-2

Abstract

The performance of CIGS-based solar cells is influenced by the phenomena occurring at the CIGS/CdS interface. In the present work, a study by the SCAPS-1D simulator of the influence of a KF layer incorporated into the CIGS/CdS interface is made with the impedance spectroscopy. The behavior of the dielectric response deduced from the Nyquist diagram shows an improvement of the shunt and serial resistance respectively when the KF is present. The Bode diagram shows a predominance of capacitive phenomena.

Keywords:
solar cells thin-film CIGS KF impedance spectroscopy Nyquist diagram Bode diagram shunt resistance series resistance simulation

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