Using the Effect of Mechanical Stress on Doped Silicon as an Angular Movement Sensor for MOEMS/MEMS Micro Mirrors

D. Berko^1, and Y.S. Diamand¹

¹Dept of Physical Electronics, P.O. Box 39040, Tel Aviv 69978, Israel

Cite this paper:
D. Berko and Y.S. Diamand. Using the Effect of Mechanical Stress on Doped Silicon as an Angular Movement Sensor for MOEMS/MEMS Micro Mirrors. American Journal of Electrical and Electronic Engineering. 2014; 2(3):88-91. doi: 10.12691/ajeee-2-3-5

Abstract

The effect of elastic strain of moderate magnitude using high doped silicon substrate can change the conductivity of the substrate. The commonly used metal (strain) gage has a magnitude factor of between 2 ÷ 4 while high doped silicon (strain) gage factor magnitude is between 150 ÷ 200, thus improving the substrate sensitivity considerably. Using those physical attributes allow us to create a MOEMS sensor resolving accuracy issues and saving space in any future MOEMS device design. Those devices will be able to measure any mechanical movement connected to the high doped silicon substrate by converting the physical strain created from the movement stress to current/voltage change in the substrate device. The simplicity of the device is that the device could measure movement without any need to implement an outer sensor to it. By measuring the device's strain change it would "feel" the movement and convert it to an analog value, thus creating a strain gage built in the MOEMS device surface.

Keywords:
mechanical stress MOEMS/MEMS angular movement sensor

This work is licensed under a Creative Commons Attribution 4.0 International License. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

References:

[1]	Stephen A. Campbell, “The Science and Engineering of Microelectronic Fabrication”, 2nd edition, Oxford, pp. 258-286.
[2]	http://www.debiotech.com/debiotech.html
[3]	Mohamed Gad-el-Hak, University of Notre Dame, “The MEMS Handbook”, chapters 15-21.
[4]	Danny Banks, “Microengineering, MEMS, and Interfacing: A Practical Guide (Mechanical Engineering), chapters 1-6. http://www.dbanks.demon.co.uk/ueng/index.html
[5]	R. B. Darling / EE-527, EE-527: Micro Fabrication Photolithography, pp 1-31.
[6]	Dr. A. Amin, “Piezoresistivity Theory and Application”, Presentation for the IEEE-Ultrasonics, Ferroelectrics & Frequency Control Society, pp 1-62 http://www.ieeeuffc.org/education/Piezoresistivity_files/frame.htm#slide0207.htm
[7]	Adrian Watt, “Wheatstone Bridges Tutorial”, Absorb Physics for A – Level.
[8]	Walt Kester, “Analog Devices Seminar Sensor Signal Conditioning”, Section 4: Strain, Force, Pressure, and Flow, pp 4.1-4.14. http://search.analog.com/search/default.aspx?query=Walt+Kester&local=en
[9]	Dan Haronian, “Direct Integration (DI) of Solid State Stress Sensors with Integrated Displacement Sensing” Department of Interdisciplinary Studies, Faculty of Engineering, Tel-Aviv University, 0-7803-5194-0/99, 1999 IEEE, pp 88-93.
[10]	http://robotics.eecs.berkeley.edu/~ronf/mfi.html/
[11]	A. Eisinberg, A. Menciassi, S. Micera, D. Campolo, M.C. Carrozza, P. Dario, “PI Force Control of a Microgripper for Assembling Biomedical Micro devices”.
[12]	Maria Chiara Carrozza, Anna Eisinberg, Arianna Menciassi, Domenico Campolo, Silvestro Micera and Paolo Dario, “Towards a Force-Controlled Microgripper For Assembling Biomedical Micro devices”, J. Micromech. Microeng. 10 (2000) 271- 276.
[13]	Gisela Lin, Kristofer S. J. Pister, and Kenneth P. Roos, “Standard CMOS Piezoresistive Sensor to Quantify Heart Cell Contractile Forces”, 0-7803-2985-6/96, 1996 IEEE, pp 150-155.
[14]	Ingo Behrens, Lutz Doering and Erwin Peiner, “Piezoresistive cantilever as portable micro force calibration standard”, Institut f¨ur Halbleitertechnik, Technische Universit at Carolo-Wilhelmina zu Braunschweig, Germany, Journal of Micromechanics and Micro engineering, J. Micromech. Microeng. 13 (2003) pp S 171-S 177.
[15]	Romain Roduit, Pierre-Andr´e Besse, Member, IEEE, and Jean-Paul Micallef “Flexible Angular Sensor”, IEEE Transactions on Instrumentation and Measurement, VOL. 47, NO. 4, AUGUST 1998, pp 1020-1022.
[16]	K.-U. Kirstein, Y. Li, M. Zimmermann, C. Vancura, T. Volden, W.H. Song, J. Lichtenberg, and A. Hierlemannn, “Cantilever-Based Biosensors in CMOS Technology”, Physical Electronics Laboratory, ETH Zurich, Switzerlan, Proceedings of the Design, Automation and Test in Europe Conference and Exhibition (DATE’ 05) 1530-1591/05, IEEE.
[17]	Joseph Edward Shigley, Charles R. Mischke, “Mechanical Engineering Design”, 5th edition, McGraw Hill, pp 37-57, pp 91-111, pp 725-763.
[18]	Ralph Steiner, Christoph Maier, Michael Mayer, Sandra Bellekom, and Henry Baltes, “Influence of Mechanical Stress on the Offset Voltage of Hall Devices Operated with.