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H. Mathieu :« Physique des Semiconducteurs et des Composants Electronique», 6eme édition, pp (616-62 Paris, 2009).

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Article

Optical Transitions in Quantum Dots

1Faculty of the Sciences, FUNDAPL Laboratory, University of Blida.1, Algeria

2Faculty of the technology, LATSI Laboratory, University of Blida.1, Algeria


International Journal of Physics. 2014, Vol. 2 No. 4, 109-111
DOI: 10.12691/ijp-2-4-3
Copyright © 2014 Science and Education Publishing

Cite this paper:
A. Benahmed, A. Aissat, M. A. Benammar. Optical Transitions in Quantum Dots. International Journal of Physics. 2014; 2(4):109-111. doi: 10.12691/ijp-2-4-3.

Correspondence to: A.  Benahmed, Faculty of the Sciences, FUNDAPL Laboratory, University of Blida.1, Algeria. Email: moumenephysique@yahoo.fr

Abstract

The analysis of the electronic states of a quantum dot of InAs grown on a GaAs substrate has been studied for different geometries. We did the calculation with each type of geometry we based on the Schrödinger equation for stationary particle and we used "Comsol" for calculations. We calculated energy values as a function of each of the parameters: length, width and thickness of the wetting layer where other parameters are held constant.

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