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Well Width Effects on Material Gain and Lasing Wavelength in InGaAsP / InP Nano-Heterostructure

by Rashmi Yadav, Pyare Lal, F. Rahman, S. Dalela and P. A. Alvi

Journal of Optoelectronics Engineering. 2014, 2(1), 1-6. DOI: 10.12691/joe-2-1-1
Pub. Date: January 27, 2014Views: 29801 Downloads: 27791Like: 42Citations: 1

material gain anti-guiding factor InGaAsP differential gain carrier density

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