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Investigation on LaF₃-Impregnated Porous Silicon Heterostructur as Potentionmetric Sensor for Fluoride Ion in Aqueous Medium

by Md. Earul Islam, Md. Julkarnain, Jaker Hossain, Abu Bakar Md. Ismail and Md. Hafijur Rahman

American Journal of Sensor Technology. 2013, 1(1), 1-4. DOI: 10.12691/ajst-1-1-1
Pub. Date: October 15, 2013Views: 22331 Downloads: 17640Like: 42

porous silicon potentiometric sensor fluoride sensor capacitive EIPS structure

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