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Investigation on LaF3-Impregnated Porous Silicon Heterostructur as Potentionmetric Sensor for Fluoride Ion in Aqueous Medium
by Md. Earul Islam, Md. Julkarnain, Jaker Hossain, Abu Bakar Md. Ismail and Md. Hafijur Rahman
American Journal of Sensor Technology. 2013, 1(1), 1-4. DOI: 10.12691/ajst-1-1-1
Pub. Date: October 15, 2013Views: 22332Downloads: 17642
porous silicon potentiometric sensor fluoride sensor capacitive EIPS structure
Abstract Full Text PDF (423 KB) Full Text HTML Full Text ePUB (367 KB)
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