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Review of AlGaN/GaN HEMTs Based Devices
by Ahmed M. Nahhas
American Journal of Nanomaterials. 2019, 7(1), 10-21. DOI: 10.12691/ajn-7-1-2
Pub. Date: April 30, 2019Views: 42128Downloads: 39147
Gallium Nitride (GaN) HEMTs Traps Defects Aluminum gallium nitride/gallium nitride (AlGaN/GaN) Aluminum Nitride (AlN)
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