eng Science and Education Publishing Journal of Materials Physics and Chemistry 2333-4444 2024-09-05 12 2 37 41 10.12691/jmpc-12-2-3 JMPC20241223 article Sally Kemuma Gichana sallygichana22@gmail.com 1 David M. Mulati 1 Timonah N. Soitah 1 Department of Physics: Jomo Kenyatta University of Agriculture and Technology (JKUAT). P.O BOX 62000-00200, NAIROBI-KENYA This paper delves into the synthesis and characterization of p-type Transparent Conducting Oxides (TCOs), with a specific focus on Gallium-doped tin oxide (SnO2:Ga)and Antimony co-doped Gallium-tin oxide thin films. The films are deposited on blue microscope glass substrates utilizing the sol-gel dip-coating method. The study tackles the challenges related to the application of p-type TCOs, highlighting advancements in electrical performance compared to their n-type counterparts. Structural characterization through X-ray diffraction indicates both crystalline and amorphous nature of the films. Sharp and narrow diffraction peaks confirm the well-defined doped phases of Ga and Sb at atomic substitutional sites of SnO2. Different phases are identified for pure SnO2and Ga-doped SnO2 films. The preferential orientation shifts with doping concentrations. Sb-co-doped SnO2 films show the highest peak intensities. The average crystallite sizes of the thin films increase with doping concentrations, ranging from 19.83 nm to 32.24 nm for Ga-doped films and 33.91 nm to 40.88 nm for Sb-co-doped films. The structural analyses suggest that SnO2:Ga and Sb-co-doped SnO2:Ga thin films are suitable p-type TCO materials for optoelectronic applications. Overall, this research contributes valuable insights into improving the performance of p-type TCOs and addresses the limitations associated with their characterization. https://pubs.sciepub.com/jmpc/12/2/3/jmpc-12-2-3.pdf P-type Thin Films Sol-Gel Structural properties