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N. Obare, W. Isoe, A. Nalianya, M. Mageto, and V. Odari, “Numerical study of copper antimony sulphide (CuSbS2) solar cell by SCAPS-1D,” Heliyon, vol. 10, no. 5, 2024.

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Optical, Structural and Morphological Characterisation of Indium Doped Cadmium Sulphide (Cds:In) Thin Films for Photovoltaic Cell Applications

1Department of physics, Kisii University, Nairobi, Kenya

2Department of physics, Egerton University, Nairobi, Kenya


International Journal of Physics. 2025, Vol. 13 No. 3, 49-54
DOI: 10.12691/ijp-13-3-1
Copyright © 2025 Science and Education Publishing

Cite this paper:
Ogechi Ogana John, Daniel Ketui, Duke Oeba. Optical, Structural and Morphological Characterisation of Indium Doped Cadmium Sulphide (Cds:In) Thin Films for Photovoltaic Cell Applications. International Journal of Physics. 2025; 13(3):49-54. doi: 10.12691/ijp-13-3-1.

Correspondence to: Ogechi  Ogana John, Department of physics, Kisii University, Nairobi, Kenya. Email: johnogechi2012@yahoo.com

Abstract

Cadmium sulphide (CdS) thin films were prepared on glass substrates using the spin-coating technique from a precursor solution containing cadmium nitrate tetrahydrate (Cd(NO₃)₂•4H₂O), indium nitrate hydrate (In(NO₃)₃•xH₂O), thiourea (CH₄N₂S), and ammonium nitrate (NH₄NO₃). This study focused on synthesizing indium-doped CdS thin films via spin coating and examining how varying indium concentrations (0.004 M, 0.006 M, 0.008 M, and 0.010 M) affect the structural and optical properties of the films. The resulting thin films were analyzed using several characterization techniques, including X-ray diffraction (XRD), UV-Visible spectroscopy (UV-Vis), and scanning electron microscopy (SEM). Analysis of the absorbance spectra indicated that the optical band gap energy ranged from 3.63 eV to 3.88 eV, with the highest value observed at an indium concentration of 0.008 M. Optical measurements obtained through UV-Vis spectrophotometry confirmed high transparency within the visible region. These findings suggest that increasing the indium content leads to a widening of the band gap.

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