Issiaka sankara^1,, Soumaïla ouedraogo^{1, 2}, Boureima traore¹, Adama zongo¹, Abdoulaye kabre¹, Daouda oubda^{1, 3}, François Zougmoré¹

Photovoltaic solar cells are currently the focus of many research projects to produce low-cost, high-quality solar cells. With this in mind, third-generation solar cells are positioned as an alternative to conventional solar cells. Perovskite-based solar cells are the focus of much interest because of their exciting optoelectronic properties. Knowledge of the properties of this cell is necessary to design high-quality solar cells. Our study is based on the influence of the electron (TiO₂) and hole (Spiro-OMeTAD) transport layers on the performance of the perovskite solar cell (PSCs). For this research, we used the Solar Cell Capacitance Simulator in 1 Dimension (SCAPS-1D) software, developed by the University of Gent in Belgium, to carry out numerical simulations on a perovskite solar cell. The calculation methodology is based on the finite difference method and integrates the transport properties, Poisson, and continuity equations, using predefined boundary conditions. Through this simulation, we studied the influence of the thickness variation and the electron transport layer's doping. In addition, we examined the doping and the mobility of the holes in the 2,2′,7,7′ tetrakis (N, N-di-p-methoxyphenylamine)-9,9′-spirobifluorene (Spiro-OMeTAD) layer on the performance of perovskite solar cell (PSCs). Good stabilities are observed when the doping of the electron transport layer is of the order of 10¹⁴cm^-3 for an ultra-thin thickness and optimum values are obtained for a doping of 10²⁰cm^-3 and a mobility greater than 10^-3cm²/Vs in the HTL layer.

Perovskite, Mobility, Doping, Defect density