1Department of Physics, Jomo Kenyatta University of Agriculture and Technology Nairobi, Kenya
American Journal of Energy Research.
2024,
Vol. 12 No. 2, 40-46
DOI: 10.12691/ajer-12-2-2
Copyright © 2024 Science and Education PublishingCite this paper: Nelson Mugambi, James Mbiyu Ngaruiya, Simon Waweru Mugo. Enhancing the Performance of Titanium Dioxide Compact Layer on Epitaxial Graphene and Fluorine Tin Oxide Heterojunctions.
American Journal of Energy Research. 2024; 12(2):40-46. doi: 10.12691/ajer-12-2-2.
Correspondence to: Nelson Mugambi, Department of Physics, Jomo Kenyatta University of Agriculture and Technology Nairobi, Kenya. Email:
nelmug2013@gmail.comAbstract
We report a facile synthesis of Titanium dioxide (TiO2) modified compact layers on Fluorine Tin oxide (FTO) and graphene employing the Sol gel Doctor Blade technique, optimized systematically for enhanced solar energy conversion applications. UV-VIS spectrophotometer, a Varian 7000e FTIR, a Scanning Kelvin Probe Microscope, and Hall Effect setup evaluated the as deposited and films subjected to 1 step, 2°C/min and 1°C/min annealing rates. FTIR revealed considerable absorption at low frequencies (less than 798 cm-1) in TiO2 on graphene heterojunctions, confirming the occurrence of Ti-O and C-O-Ti bonds. The predominant anatase TiO2 characteristic was found at 438 cm-1. The TiO2 on graphene film annealed at 1 °C/min exhibited the lowest porosity (46%), as well as the highest dispersion energy (11.30 eV). As the annealing rates declined, so did the surface-to-volume energy loss ratio for all the annealed films. Graphene TiO2 annealed at 1 oC/min had a lower VELF/SELF than TiO2 on FTO, implying that an electron loses less energy when passing through the TiO2 on graphene layer than it does in TiO2 on FTO. The light absorption coefficient α and electron diffusion coefficient D of TiO2 on graphene improved to 4.637 x 103 and 1.485 x 10-4 (1 oC/min), respectively, whereas TiO2 on FTO values increased to 4.221 x 103 and 1.251 x 10-4 (1°C/min), in that order, with decreasing annealing rates. Higher values of TiO2 on graphene α and D indicate enhanced electron transition in the films. Hall Effect measurements on as-deposited and annealed TiO2 on graphene films demonstrated higher conductivity as annealing rates decreased, which was attributed to film recrystallization induced by calcination. Smoluchowski smoothing model, reveal surface scan average work functions (φ) and linear profile scan average work functions (φ) ensemble variations in granular tilts and surface slopes explaining geographic variation and distribution. Local fluctuations in φ triggered by the spatially varying concentrations of electric dipole moments are intrinsic to atomic steps and influence φ. TiO2 incorporation on graphene photoanode increased h+/e-separation, electron transport, and light absorption. The continuous conduction network on compact TiO2 nanoparticles acts as an electron leakage barrier, and the porous structure has a large specific surface area.
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