Boureima Traore^1,, Soumaila Ouedraogo¹, Issiaka Sankara¹, Marcel Bawindsom Kébré¹, Daouda ¹,

In thin-film solar cells based on CIGS (Copper Indium Gallium Selenide), bulk defects are disruptions in the regular, periodic arrangement of atoms within the crystalline structure. This research utilizes numerical simulations and the SCAPS-1D software to investigate how volume defects within the CIGS absorber impact the performance of the solar cell. The study reveals three operational zones for the cell, depending on the concentration of defects in the CIGS absorber. An examination of the influence of absorber thickness, bandgap, and doping on CIGS solar cell performance in these operational zones is conducted. The results indicate that optimal performance is achieved when the density of bulk defects in the absorber is below 5.10¹³ cm^-3 (Zone I). This optimization involves using an absorber with a thickness of approximately 2.5 μm, a bandgap ranging from 1.3 eV to 1.4 eV, and an acceptor density of N_A = 10¹⁶ cm^-3.

numerical simulation, bulk défects, cigs absorbe, acceeptor density