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Chen, M.-C., and, Bevan, M., “Room temperature 3-5 micrometer wavelength HgCdTe heterojunction emitter”, U.S. Patent 5, 998,809. Dec. 1999.

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High-Temperature Infrared Emitters Based on HgCdTe Grown by Molecular-Beam Epitaxy

Journal of Optoelectronics Engineering. 2013, Vol. 1 No. 1, 1-4
DOI: 10.12691/joe-1-1-1
Copyright © 2013 Science and Education Publishing

Cite this paper:
K.D. Mynbaev, N.L. Bazhenov, A.V. Shilyaev, S.A. Dvoretsky, N.N. Mikhailov, M.V. Yakushev, V.G. Remesnik, V.S. Varavin. High-Temperature Infrared Emitters Based on HgCdTe Grown by Molecular-Beam Epitaxy. Journal of Optoelectronics Engineering. 2013; 1(1):1-4. doi: 10.12691/joe-1-1-1.

Correspondence to: K.D. Mynbaev, . Email:


Prospects of fabrication of high-temperature (up to 300K) infrared emitters based on HgCdTe alloys is discussed on the basis of the results of the study of photoluminescence of hetero-epitaxial structures. The structures were grown by molecular-beam epitaxy and emitted light with wavelength of 1.5 to 4.3µm at room temperature. It is suggested that observation of photoluminescence of the narrow-gap semiconductor at high temperatures and the specific shape of photoluminescence spectra can be explained by taking into account HgCdTe alloy disorder as is the case, for example, in structures based on III-nitrides. Requirements for technology considerations for the optically-pumped high-temperature infrared emitters based on HgCdTe are discussed.