1Department of Physics, Faculty of Applied Sciences, Jomo Kenyatta University of Agriculture and Technology (JKUAT), Nairobi, Kenya
Journal of Materials Physics and Chemistry.
2021,
Vol. 9 No. 1, 20-25
DOI: 10.12691/jmpc-9-1-4
Copyright © 2021 Science and Education PublishingCite this paper: Patrick Muvaka, Waweru Mugo, Richard Ongeri, Mbiyu Ngaruiya. Thermochromic Properties of VO
2 Thin Films Derived from Thermal Reduction of Sol-Gel Deposited V
2O
5.
Journal of Materials Physics and Chemistry. 2021; 9(1):20-25. doi: 10.12691/jmpc-9-1-4.
Correspondence to: Patrick Muvaka, Department of Physics, Faculty of Applied Sciences, Jomo Kenyatta University of Agriculture and Technology (JKUAT), Nairobi, Kenya. Email:
muvakapatwork@gmail.comAbstract
Vanadium dioxide (VO2) thin films were prepared by thermal reduction of vanadium pentoxide (V2O5) films and thermochromic properties of the films were investigated. V2O5 films were prepared by dip-coating glass substrates at different withdrawal speeds of 5, 10, 15, and 20 mm/min. The as-deposited V2O5 films were annealed at different temperatures of 450, 500, 550 and 600°C in an inert environment of flowing argon gas under normal atmospheric pressure. The as-deposited V2O5 films were gray in color and the films changed color to golden yellow after annealing. UV-VIS-NIR spectrophotometry and sheet resistance probe were used to evaluate performance of the films. The result shows that a withdrawal speed of 5mm/min and annealing temperature of 500°C produced homogeneous VO2 films with luminous transmittance close to the desired transmittance threshold for day-lighting. This was attributed to reduced thickness and crystallization resulting to low absorption by VO2. Results showed that 500°C was threshold for obtaining crystalline VO2 films. UV-VIS-NIR analysis revealed solar modulation ability of 5.2%, large transmittance change of over 35°C in the IR region and hysteresis loop of 6.0°C when going through phase transition between 25°C and 90°C. Temperature dependence of sheet resistance revealed semiconductor to metal transition behavior change of 2 orders of magnitude across transition temperature. The film showed semiconductor to metal transition temperature of 61.2°C lower than the classical value of 68°C and was attributed to crystalline structure of the films. This simple solution process followed by thermal reduction makes the VO2 potentially useful in smart window application.
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