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Senani R., and Bhaskar D. R., “Comment: Practical voltage/current-controlled grounded resistor with dynamic range extension.” IET Circuits, Devices and Systems 2.5 (2008): 465-466. 2008.

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Article

CMOS Voltage-Controlled Negative Resistance Realization

1Department of Electronics and Communication Engineering, Netaji Subhash University of Technology (formerly, NSIT), Sector 3, Dwarka, New-Delhi 110078, India


American Journal of Electrical and Electronic Engineering. 2020, Vol. 8 No. 4, 120-124
DOI: 10.12691/ajeee-8-4-4
Copyright © 2020 Science and Education Publishing

Cite this paper:
Soumya Mourya, Raj Senani. CMOS Voltage-Controlled Negative Resistance Realization. American Journal of Electrical and Electronic Engineering. 2020; 8(4):120-124. doi: 10.12691/ajeee-8-4-4.

Correspondence to: Raj  Senani, Department of Electronics and Communication Engineering, Netaji Subhash University of Technology (formerly, NSIT), Sector 3, Dwarka, New-Delhi 110078, India. Email: senani@ieee.org

Abstract

In this communication, a new CMOS circuit configuration is proposed to realize a voltage-controlled negative resistance (VCNR) which has been implemented using only eight MOS transistors- all working in the saturation region. The value of the realized negative resistance is controlled by two identical and opposite external DC voltages. The workability of the proposed circuit has been confirmed by Cadence Virtuoso simulations and some sample results have been given. The proposed VCNR circuit has been shown to exhibit good linearity, has good variable negative resistance range from -1.05kΩ and -300Ω and offers a good operational frequency range up to around 100 MHz with total power dissipation between 0.5mW- 8.73mW only.

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