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X. Cai, A. Djurisic, M. Xie, H. Liu, X. Zhang, J. Zhu, and H. Yang, “Ferromagnetism in Mn and Cr doped GaN by thermal diffusion,” Materials Science and Engineering B 117, 292-295 (2005).

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Article

Review of GaN Nanostructured Based Devices

1Department of Electrical Engineering, Faculty of Engineering and Islamic Architecture, Umm Al Qura University, Makkah, Saudi Arabia


American Journal of Nanomaterials. 2018, Vol. 6 No. 1, 1-14
DOI: 10.12691/ajn-6-1-1
Copyright © 2018 Science and Education Publishing

Cite this paper:
Ahmed M. Nahhas. Review of GaN Nanostructured Based Devices. American Journal of Nanomaterials. 2018; 6(1):1-14. doi: 10.12691/ajn-6-1-1.

Correspondence to: Ahmed  M. Nahhas, Department of Electrical Engineering, Faculty of Engineering and Islamic Architecture, Umm Al Qura University, Makkah, Saudi Arabia. Email: amnahhas@uqu.edu.sa

Abstract

This paper presents a review of recent advances of GaN based nanostructured materials and devices. GaN has gained substantial interest in the research area of wide band gap semiconductors due to its unique electrical, optical and structural properties. GaN nanostructured material exhibits many advantages for nanodevices due to its higher surface-to-volume ratio as compared to thin films. GaN nanostructured material has the ability to absorb ultraviolet (UV) radiation and immense in many optical applications. Recently, GaN nanostructured based devices have gained much attention due to their various potential applications. GaN as nanomaterial have been used in many devices such as UV photodetectors, light emitting diodes, solar cells and transistors. The recent aspects of GaN based devices are presented and discussed. The performance of several devices structures which has been demonstrated on GaN is reviewed. The structural, electrical, and optical properties are also reviewed.

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