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R. K. Ahrenkiel, D. J. Dunlavy, H. C. Hamaker, R. T. Green, C. R. Lewis, R. E. Hayes, H. Fardi « Time of-flight studies of minority-carrier diffusion in AlxGa1-xAs homojunctions » J. Appl. Phys. 49(12) (1986).

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Article

Influence of Irradiation on the Diffusion’s Capacity of a Bifacial Solar Cell Containing Thin Film CIGS

1Department Physics, University Cheikh Anta DIOP, Dakar, Senegal


American Journal of Materials Science and Engineering. 2018, Vol. 6 No. 1, 12-17
DOI: 10.12691/ajmse-6-1-3
Copyright © 2018 Science and Education Publishing

Cite this paper:
Salif CISSE, Alain EHEMBA, Ousmane DIAGNE, Mouhamadou Mamour SOCE, Moustapha DIENG. Influence of Irradiation on the Diffusion’s Capacity of a Bifacial Solar Cell Containing Thin Film CIGS. American Journal of Materials Science and Engineering. 2018; 6(1):12-17. doi: 10.12691/ajmse-6-1-3.

Correspondence to: Salif  CISSE, Department Physics, University Cheikh Anta DIOP, Dakar, Senegal. Email: slfcisse@gmail.com

Abstract

The objective of this study is to present and explain theoretically the influence of irradiation energy on the diffusion capacity of a bifacial CuInGaSe2 solar cell under monochromatic illumination in dynamic frequency regime. Using the equation of continuity of the minority charge carriers in the base, the density of these carriers is determined. Then the expressions of the phototension are deduced. From these quantities the expressions of the capacitance are calculated and the representations of the curve of these parameters as well as the representation of the BODE diagram are interpreted. The obtained values are proposed with the effect of the irradiation energy.

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