1Department of Physics, University of Baghdad / College of Sciences
2Department of Physics, University of Tikrit/College of Education
International Journal of Physics.
2017,
Vol. 5 No. 4, 116-120
DOI: 10.12691/ijp-5-4-3
Copyright © 2017 Science and Education PublishingCite this paper: Kadhem A. Aadim, Abdulmajeed E. Ibrahim, Qutaibah A. Abduljabbar. Optical and Electrical Properties of (SnO
2)
X(In
2O
3)
1-X thin Films Prepared by Pulse Laser Deposition Technique.
International Journal of Physics. 2017; 5(4):116-120. doi: 10.12691/ijp-5-4-3.
Correspondence to: Qutaibah A. Abduljabbar, Department of Physics, University of Tikrit/College of Education. Email:
qutaibahalrawi5378@gmail,comAbstract
In this work, fundamental wavelength (1064 nm) Q- switched Nd:YAG laser with 800 mJ peak energy on SnO2:In2O3 target to produce ITO thin films. Thin films characterized by UV-visible absorbance, DC conductivity, Hall effect measurements and X-ray diffraction. It was found that the transmission increase with increasing In2O3 ratio from 0 to 0.5 reaching about 88% in visible range. It can be seen that the conductivity increase with increasing ratio from 0 to 0.3 then decrease at 0.5 ratio. It can be found from Hall effect measurement that the mobility μH increase at 0.1 ratio then decrease with more In2O3 content.
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