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J. Li, H.Y. Yu, Y. Li, F. Wang, M. Yang, and S. M. Wong, “Low aspect-ratio hemispherical nanopit surface texturing for enhancing light absorption in crystalline Si thin film-based solar cells”, Applied Physics Letters, 98, 021905-021908, (2011) .

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Article

Optical and Electrical Properties of (SnO2)X(In2O3)1-X thin Films Prepared by Pulse Laser Deposition Technique

1Department of Physics, University of Baghdad / College of Sciences

2Department of Physics, University of Tikrit/College of Education


International Journal of Physics. 2017, Vol. 5 No. 4, 116-120
DOI: 10.12691/ijp-5-4-3
Copyright © 2017 Science and Education Publishing

Cite this paper:
Kadhem A. Aadim, Abdulmajeed E. Ibrahim, Qutaibah A. Abduljabbar. Optical and Electrical Properties of (SnO2)X(In2O3)1-X thin Films Prepared by Pulse Laser Deposition Technique. International Journal of Physics. 2017; 5(4):116-120. doi: 10.12691/ijp-5-4-3.

Correspondence to: Qutaibah  A. Abduljabbar, Department of Physics, University of Tikrit/College of Education. Email: qutaibahalrawi5378@gmail,com

Abstract

In this work, fundamental wavelength (1064 nm) Q- switched Nd:YAG laser with 800 mJ peak energy on SnO2:In2O3 target to produce ITO thin films. Thin films characterized by UV-visible absorbance, DC conductivity, Hall effect measurements and X-ray diffraction. It was found that the transmission increase with increasing In2O3 ratio from 0 to 0.5 reaching about 88% in visible range. It can be seen that the conductivity increase with increasing ratio from 0 to 0.3 then decrease at 0.5 ratio. It can be found from Hall effect measurement that the mobility μH increase at 0.1 ratio then decrease with more In2O3 content.

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