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M. D. Nguyen, H. N. Vu, D. H. A Blank & G. Rijnders, “Epitaxial Pb(Zr, Ti)O3 thin films for a MEMS application,” Adv. Nat. Sci.: Nano sci. Nano technol. 2, 015005, (2011).

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Article

The Effect of Zr Concentration on Structural, Optical and Electrical Properties of Pb(Zrx,Ti1-x)O3 PZT Prepared by Pulsed Laser Deposition Technique

1Department of Physics, University of Baghdad / College of Sciences

2Department of Physics, University of Tikrit/College of Education


International Journal of Physics. 2017, Vol. 5 No. 1, 30-36
DOI: 10.12691/ijp-5-1-5
Copyright © 2017 Science and Education Publishing

Cite this paper:
Ghuson H. Mohammed, Abdul Kareem D. Ali, Hameed A. Radwan. The Effect of Zr Concentration on Structural, Optical and Electrical Properties of Pb(Zrx,Ti1-x)O3 PZT Prepared by Pulsed Laser Deposition Technique. International Journal of Physics. 2017; 5(1):30-36. doi: 10.12691/ijp-5-1-5.

Correspondence to: Hameed  A. Radwan, Department of Physics, University of Tikrit/College of Education. Email: ham2348378@gmail.com

Abstract

Pb(Zrx,Ti1-x)O3 PZT thin films with various ratio of Zr / Ti (x=0.1, 0.3, 0.5, 0.7, 0.9) deposited on glass by pulsed laser deposition technique to investigate the structural, optical and electrical properties in these films. The films were deposited at room temperature. X-ray diffraction (XRD) analysis for PZT illustrated a perovskite phase with a polycrystalline structure at RT for all samples. Optical studies showed that the optical energy gap increases with increasing Zr concentration. The d.c. conductivity (σd.c) decreased with increasing of Zr content. It was observed that the films have two activation energies that decrease with the increase of Zr content. Hall measurements showed that all the films were p-type and the carriers concentration were increase with the increasing of Zr, the mobility inversely proportional with the carriers concentration.

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