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A. Green “Concentration and Minority-Carrier Mobility of Silicon from 77-300K”, Journal of Applied Physics, Vol. 73, pp. 1214-1225, 1993.

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Article

Variation of Excess Minority Carriers Density in Function to Silicon Solar Cell Paremeters Involving Excitons Effects

1Laboratoire de Semi-conducteurs et d’Energie Solaire, Département de Physique, Faculté des Sciences et Techniques (UCAD-SENEGAL)


Physics and Materials Chemistry. 2016, Vol. 4 No. 1, 10-14
DOI: 10.12691/pmc-4-1-3
Copyright © 2016 Science and Education Publishing

Cite this paper:
Mamadou NIANE, Modou FAYE, Saliou NDIAYE, Modou PILOR, Ousmane NGOM, Moulaye DIAGNE, Nacire MBINGUE, Omar. A. NIASSE, Bassirou BA. Variation of Excess Minority Carriers Density in Function to Silicon Solar Cell Paremeters Involving Excitons Effects. Physics and Materials Chemistry. 2016; 4(1):10-14. doi: 10.12691/pmc-4-1-3.

Correspondence to: Mamadou  NIANE, Laboratoire de Semi-conducteurs et d’Energie Solaire, Département de Physique, Faculté des Sciences et Techniques (UCAD-SENEGAL). Email: futuringe@gmail.com

Abstract

In this work, we have studied the variations of excess minority carriers density in the base in function to some parameters to the silicon solar cell taking into account excitons effects. To do this, we have taken the expressions of excess electrons density in the base obtained by resolution of the differential equations of charge transport in static condition, the study of here variations are done in function to some cell parameters such as the binding coefficient between electrons and excitons and the base thickness in strong coupling. The profile of the excess electron variation in function to the base thickness for a strong coupling shows that, at the base junction, he is independent to the binding coefficient. This invariance is done to the intervention of the electric field that prevails in the depletion region which dissociates almost all excitons arriving at the junction. In depth, a strong coupling coefficient decreases the excess minority carriers density due to recombination that occur with excitons. The excess electrons density variation enabled us to know that when the coupling is strong, the doping level decreases the electrons density caused by the increase of recombination region due to the introduction of many impurities.

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