Article citationsMore >>

J. H. Park, C. H. Jung, D. J. Kim, J. Y. Park, “Temperature dependency of the LPCVD growth of ZrC with the ZrCl 4--CH 4--H 2 system,” Surf. Coatings Technol., vol. 203, no. 3, pp. 324-328, 2008.

has been cited by the following article:

Article

CVD Growth of ZrC Layers at Different Temperatures

1Department of Physics, University of Pretoria 0028, South Africa

2Department of Physics, Sudan University of Science and Technology, Khartoum, Sudan

3Applied Chemistry Division, South Africa Nuclear Energy Corporation (Necsa), P.O Box 582, Pretoria 0001, South Africa

4Department of Chemical Engineering, University of Pretoria 0028, South Africa


Physics and Materials Chemistry. 2016, Vol. 4 No. 1, 6-9
DOI: 10.12691/pmc-4-1-2
Copyright © 2016 Science and Education Publishing

Cite this paper:
BAB Alawad, S Biira, H Bissett, JT Nel, TT Hlatshwayo, PL Crouse, JB Malherbe. CVD Growth of ZrC Layers at Different Temperatures. Physics and Materials Chemistry. 2016; 4(1):6-9. doi: 10.12691/pmc-4-1-2.

Correspondence to: BAB  Alawad, Department of Physics, University of Pretoria 0028, South Africa. Email: alawad20024@gmail.com

Abstract

Zirconium carbide (ZrC) layers were grown on a graphite substrate by chemical vapour deposition (CVD) at 1250°C, 1300°C and 1350°C. Zirconium tetrachloride (ZrCl4), methane (CH4), hydrogen (H2) and argon (Ar) were used as precursors. The deposited ZrC layers were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XDR showed ZrC characteristic peaks with free carbon. Free carbon incorporated in the ZrC layer increased with deposition temperature. The average of grain size also increased with deposition temperature. The latter findings were confirmed by SEM results.

Keywords