1Department of Physics, University of Pretoria 0028, South Africa
2Department of Physics, Sudan University of Science and Technology, Khartoum, Sudan
3Applied Chemistry Division, South Africa Nuclear Energy Corporation (Necsa), P.O Box 582, Pretoria 0001, South Africa
4Department of Chemical Engineering, University of Pretoria 0028, South Africa
Physics and Materials Chemistry.
2016,
Vol. 4 No. 1, 6-9
DOI: 10.12691/pmc-4-1-2
Copyright © 2016 Science and Education PublishingCite this paper: BAB Alawad, S Biira, H Bissett, JT Nel, TT Hlatshwayo, PL Crouse, JB Malherbe. CVD Growth of ZrC Layers at Different Temperatures.
Physics and Materials Chemistry. 2016; 4(1):6-9. doi: 10.12691/pmc-4-1-2.
Correspondence to: BAB Alawad, Department of Physics, University of Pretoria 0028, South Africa. Email:
alawad20024@gmail.comAbstract
Zirconium carbide (ZrC) layers were grown on a graphite substrate by chemical vapour deposition (CVD) at 1250°C, 1300°C and 1350°C. Zirconium tetrachloride (ZrCl4), methane (CH4), hydrogen (H2) and argon (Ar) were used as precursors. The deposited ZrC layers were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XDR showed ZrC characteristic peaks with free carbon. Free carbon incorporated in the ZrC layer increased with deposition temperature. The average of grain size also increased with deposition temperature. The latter findings were confirmed by SEM results.
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