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M. Sabaghi, M. Rahnama, M. N. Lahiji, M. S. Miri, Sh. Rezakhani, “Design and Simulation of Differential Active Inductor with 0.18 μm CMOS Technology,” Canadian Journal on Electrical and Electronics Engineering, vol. 2, no. 9, 2011.

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Article

1 GHz CMOS Band-pass Filter Design Using an Active Inductor and Capacitor

1Department of Electrical Engineering, Science and Research Branch, Islamic Azad University, Tehran, Iran


American Journal of Electrical and Electronic Engineering. 2013, Vol. 1 No. 3, 37-41
DOI: 10.12691/ajeee-1-3-1
Copyright © 2013 Science and Education Publishing

Cite this paper:
Siavash Heydarzadeh, Pooya Torkzadeh. 1 GHz CMOS Band-pass Filter Design Using an Active Inductor and Capacitor. American Journal of Electrical and Electronic Engineering. 2013; 1(3):37-41. doi: 10.12691/ajeee-1-3-1.

Correspondence to: Siavash Heydarzadeh, Department of Electrical Engineering, Science and Research Branch, Islamic Azad University, Tehran, Iran. Email: S.heydarzadeh@srbiau.ac.ir

Abstract

This work offers the use of an active inductor and capacitor to build RF band-pass filter with 0.18μm and TSMC process. Based on the proposed structure, a prototype 1 GHz active filter designed and simulated in a 0.18μm CMOS technology. Simulation results for the designed RF band-pass filter show S21 > 19dB and consuming power less than 14 mW from 1.8 V supply voltage. The absolute values of reflection parameters (|S11| and |S22|) are about 60 dB. Low-bandwidth linear noise at output node are less than -170 dB and Advanced Design System (ADS) used to produce 1 GHz band-pass active filter simulation results.

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