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High-Temperature Infrared Emitters Based on HgCdTe Grown by Molecular-Beam Epitaxy

by K.D. Mynbaev, N.L. Bazhenov, A.V. Shilyaev, S.A. Dvoretsky, N.N. Mikhailov, M.V. Yakushev, V.G. Remesnik and V.S. Varavin

Journal of Optoelectronics Engineering. 2013, 1(1), 1-4. DOI: 10.12691/joe-1-1-1
Pub. Date: March 26, 2013Views: 18019 Downloads: 12900Like: 36

HgCdTe infrared emitters photoluminescence alloy disorder

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