Science and Education Publishing Journal of Materials Physics and Chemistry 2333-4444 3 1 2015 05 29 Electronic Properties of Bonds in AIBIIICVI2 Chalcopyrite Semiconductors 6 10 EN D S Yadav Department of Physics, Ch. Charan Singh P G College Heonra (Saifai) Etawah-206001 (U.P.) India JMPC2015312 10.12691/jmpc-3-1-2 2015 03 27 2015 05 20 2015 05 29 In this paper a new approach utilizing the concept of plasma oscillations theory of solids has been applied to investigate the electronic properties such as homopolar gap (Eh), heteropolar or ionic gap (Ec), average energy gap (Eg), bond ionicity (fi) and electronic susceptibility (e) for the chemical bonds (A-C and B-C) in complex structured AIBIIICVI2 ternary chalcopyrite crystals. We have presented the expressions relating the electronic properties for these chalcopyrite crystals with plasmon energy (?֦p). The homopolar gap (Eh), heteropolar gap (Ec), average energy gap (Eg), bond ionicity (fi) and electronic susceptibility (ئe) of the bonds in these semiconductors exhibit a linear relationship when plotted on a log-log scale against the valence electron plasmon energy, which lies on the straight line. The calculated values of Eh, Ec, Eg, fi and ֦e have been compared with the available theoretical values reported by several workers so far. A fairly good agreement has been obtained between them.