@article{jmpc2015312,
author={Yadav, D S},
title={Electronic Properties of Bonds in A<SUP>I</SUP>B<SUP>III</SUP>C<SUP>VI</SUP><SUB>2</SUB> Chalcopyrite Semiconductors},
journal={Journal of Materials Physics and Chemistry},
volume={3},
number={1},
pages={6--10},
year={2015},
url={http://pubs.sciepub.com/jmpc/3/1/2},
issn={2333-4444},
abstract={In this paper a new approach utilizing the concept of plasma oscillations theory of solids has been applied to investigate the electronic properties such as homopolar gap (E<SUB>h</SUB>), heteropolar or ionic gap (E<SUB>c</SUB>), average energy gap (E<SUB>g</SUB>), bond ionicity (f<SUB>i</SUB>) and electronic susceptibility (<SUP>¦Ö</SUP><SUB>e</SUB>) for the chemical bonds (A-C and B-C) in complex structured A<SUP>I</SUP>B<SUP>III</SUP>C<SUP>VI</SUP><SUB>2</SUB><SUB> </SUB>ternary chalcopyrite crystals. We have presented the expressions relating the electronic properties for these chalcopyrite crystals with plasmon energy (?¦Ø<SUB>p</SUB>). The homopolar gap (E<SUB>h</SUB>), heteropolar gap (E<SUB>c</SUB>), average energy gap (E<SUB>g</SUB>), bond ionicity (f<SUB>i</SUB>) and electronic susceptibility (<SUP>¦Ö</SUP><SUB>e</SUB>) of the bonds in these semiconductors exhibit a linear relationship when plotted on a log-log scale against the valence electron plasmon energy, which lies on the straight line. The calculated values of E<SUB>h</SUB>, E<SUB>c</SUB>, E<SUB>g</SUB>, f<SUB>i</SUB><SUB> </SUB>and ¦Ö<SUB>e</SUB><SUB> </SUB>have been compared with the available theoretical values reported by several workers so far. A fairly good agreement has been obtained between them.},
doi={10.12691/jmpc-3-1-2}
publisher={Science and Education Publishing}
}