<?xml version="1.0" encoding="UTF-8"?>
<records>
<record>
<language>eng</language>
<publisher>Science and Education Publishing</publisher>
<journalTitle>Journal of Materials Physics and Chemistry</journalTitle>
<publicationDate>2013-12-31</publicationDate>
<volume>2</volume>
<issue>1</issue>
<startPage>9</startPage>
<endPage>14</endPage>
<doi>10.12691/jmpc-2-1-2</doi>
<publisherRecordId>JMPC2014212</publisherRecordId>
<documentType>article</documentType>
<title language="eng">Simulation of Single Crystalline CdZnTe Solidification Process</title>
<authors>
<author>
<name>A.M. Martínez</name>
<email>anamartinez.tutora@gmail.com</email>
<affiliationId>1</affiliationId>
</author>
<author>
<name>M.R. Rosenberger</name>
<affiliationId>2</affiliationId>
</author>
<author>
<name>A.B. Trigubó</name>
<affiliationId>3</affiliationId>
<affiliationId>4</affiliationId>
</author>
<author>
<name>R.L. D´Elía</name>
<affiliationId>4</affiliationId>
</author>
<author>
<name>E.A. Heredia</name>
<affiliationId>4</affiliationId>
</author>

</authors>
<affiliationsList>
<affiliationName affiliationId="1">CEDIT-CeDITec, Félix de Azara 1890 5o piso, Posadas, Pcia. de Misiones, Argentina</affiliationName>
<affiliationName affiliationId="2">IMAM-CONICET-UNaM, FEQYN, Félix de Azara 1552, Posadas, Pcia. de Misiones, Argentina</affiliationName>
<affiliationName affiliationId="3">FRBA-UTN, Medrano 951, CABA, Argentina</affiliationName>


</affiliationsList>
<abstract language="eng">Single crystals of Cd1-xZnxTe ( 0 ≤ x ≤ 0.1 ) (CZT/CdZnTe) are used in manufacture of gamma and X-ray detectors and as substrates for epitaxial growth of HgCdTe. Computer simulation for the solidification of CZT was performed using finite elements. The simulation results indicate that a lower translation speed of the quartz ampoule within the Bridgman furnace determines a lower concavity of the liquid interface which assures a good crystalline quality. When the rate is 3.32 mm/h the concavity is 58% greater than for a speed of 0.50 mm/h. It was experimentally found that when growing at low speed, 1.66 mm/h, the process is more stable and improves the crystalline quality due that only two grains were generated in CZT ingots. Meanwhile a faster growth speed- 3.32 mm/h- generates a large amount of grains in the CZT ingot.</abstract>
<fullTextUrl format="pdf">http://pubs.sciepub.com/jmpc/2/1/2/jmpc-2-1-2.pdf</fullTextUrl>
<keywords language="eng">CdZnTeBridgman methodnumerical simulationfinite element methodsingle crystal growthII-VI Semiconductors</keywords>
</record>
</records>
