<?xml version="1.0" encoding="UTF-8"?>
<records>
<record>
<language>eng</language>
<publisher>Science and Education Publishing</publisher>
<journalTitle>International Transaction of Electrical and Computer Engineers System</journalTitle>
<eissn>ISSN Pending</eissn>
<publicationDate>2014-01-15</publicationDate>
<volume>2</volume>
<issue>1</issue>
<startPage>14</startPage>
<endPage>18</endPage>
<doi>10.12691/iteces-2-1-3</doi>
<publisherRecordId>ITECES2014213</publisherRecordId>
<documentType>article</documentType>
<title language="eng">Global Analysis of Rectifying Antenna with GaN Schottky Barrier Diode using WCIP Method for Wireless Power Transmission</title>
<authors>
<author>
<name>Zied Harouni</name>
<email>zied.harouni@fst.rnu.tn</email>
<affiliationId>1</affiliationId>
</author>
<author>
<name>Lassaad Latrach</name>
<affiliationId>1</affiliationId>
</author>
<author>
<name>Lotfi Osman</name>
<affiliationId>1</affiliationId>
</author>
<author>
<name>Ali Gharsallah</name>
<affiliationId>1</affiliationId>
</author>
<author>
<name>Henri Baudrand</name>
<affiliationId>2</affiliationId>
</author>

</authors>
<affiliationsList>
<affiliationName affiliationId="1">Laboratoire d’Electronique Département de physique, Faculté des Sciences de Tunis, El Manar, Tunisia</affiliationName>



<affiliationName affiliationId="2">Laboratoire d’Electronique ENSEEIHT de Toulouse France</affiliationName>
</affiliationsList>
<abstract language="eng">A precise technique based on the wave concept iterative procedure (WCIP) and a fast mode transformation (FMT) is used to analyze a rectifying antenna (Rectenna) circuit. This global analysis is achieved by using surface impedance to model the nonlinear element (GaN Schottky Barrier diode). These systems use the manufacturing processes of integrated circuits. In order to initialize the iterative procedure, an incident wave is defined in spectral domain. The numerical results are compared to those obtained with the measured one. The good agreement between simulated and published data justifies the design procedure.</abstract>
<fullTextUrl format="pdf">http://pubs.sciepub.com/iteces/2/1/3/iteces-2-1-3.pdf</fullTextUrl>
<keywords language="eng">rectennaWCIPGaN Schottky barrier diodeRF2D-FFT algorithm</keywords>
</record>
</records>
