@article{ijp2017543,
author={{Aadim, Kadhem A. and Ibrahim, Abdulmajeed E. and Abduljabbar, Qutaibah A.},
title={Optical and Electrical Properties of (SnO<SUB>2</SUB>)<SUB>X</SUB>(In<SUB>2</SUB>O<SUB>3</SUB>)<SUB>1-X</SUB> thin Films Prepared by Pulse Laser Deposition Technique},
journal={International Journal of Physics},
volume={5},
number={4},
pages={116--120},
year={2017},
url={http://pubs.sciepub.com/ijp/5/4/3},
issn={2333-4576},
abstract={In this work, fundamental wavelength (1064 nm) Q- switched Nd:YAG laser with 800 mJ peak energy on SnO<SUB>2</SUB>:In<SUB>2</SUB>O<SUB>3 </SUB>target to produce ITO thin films. Thin films characterized by UV-visible absorbance, DC conductivity, Hall effect measurements and X-ray diffraction. It was found that the transmission increase with increasing In<SUB>2</SUB>O<SUB>3 </SUB>ratio from 0 to 0.5 reaching about 88% in visible range. It can be seen that the conductivity increase with increasing ratio from 0 to 0.3 then decrease at 0.5 ratio. It can be found from Hall effect measurement that the mobility ¦Ì<SUB>H</SUB><SUB> </SUB>increase at 0.1 ratio then decrease with more In<SUB>2</SUB>O<SUB>3</SUB> content.},
doi={10.12691/ijp-5-4-3}
publisher={Science and Education Publishing}
}